Advanced Nanotechnology Memories, 2005

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Advanced Nanotechnology Memories
(Vertical RAM and Flash cells, Quantum bits, Stacked SRAMs, Nanowires, Molecular self assembly, Thyristor RAM, MEMs, Spintronics, Single Electron Memories, gain memories- SESO)
September 2005

As we move into the era of nanotechnology memories new technologies are going to be required. Some are already well along in development and are not be touched on such as the trend to replacing the flash memory floating gate with nitride trapping site storage. The so-called emerging memories, FeRAM, MRAM and phase change RAM are also well along in development and well documented elsewhere. The intent in this report is to see what is being done differently in the 2004-2005 timeframe as we move into the sub 20 nm era of memory technology development. Vertical technologies are discussed, both vertical flash and RAM technologies and also stacked silicon RAM devices. The solid electrolyte cells have the potential for nanoscaling and are mentioned. The various types of capacitorless DRAMs are discussed both for the scaling potential of the single transistor cell and also for the trend toward memories in SOI logic. Gain memories reappear occasionally and the single electron SESO gain memory is noted. Quantum storage appears to have moved out of the realm of the theoretical with actual device technology being discussed. Spintronic technology beyond the tunneling junction MRAM is discussed. Hybrid molecular and biological memories are showing some promise and are included along with some discussion of nanowires and nanotubes. Single electron memories continue to be investigated. A negative resistance memory, the thyristor RAM, is showing some promise. Finally, the MEMs memories are being offered in early development. 30+ pages.

DESCRIPTION | TO ORDER

Advanced Nanotechnology Memories
(Vertical RAM and Flash cells, Quantum bits, Stacked SRAMs, nanowires, Molecular self assembly, Thyristor RAM, MEMs, Spintronics, Single Electron Memories, gain memories- SESO)
September 2005

Table of Contents:

0. Overview of Advanced Nanotechnology Memories

1.0 Vertical Flash Cells in CMOS Technology
1.1 Vertical NOR Flash Cell
1.2 Vertical NAND Flash Cell

2.0 Vertical RAM Cells in CMOS Technology

3.0 Stacked SRAM Cells

4.0 Solid Electrolyte Switches

5.0 Capacitorless DRAM/ 1T DRAM
   5.1 Capacitorless DRAM Cell on Partially Depleted SOI
   5.2 Capacitorless DRAM Cell on Fully Depleted SOI
   5.3 Capacitorless DRAM Cell on Bulk Silicon
   5.4 Capacitorless DRAM Using A Double Gate FinFET Structure

6.0 Advanced Gain Memories
6.1 Single-Electron-Shut-Off (SESO) Gain Memory

7.0 Quantum Storage
   7.1 Overview Quantum Storage
   7.2 Quantum Bit Entangled State Device
   7.3 Quantum Bits Using Electron Spins

8.0 Spintronics
   8.1 Spin Based Quantum Devices
   8.2 Spintronic Domain Wall Magnetic Race Track Memory
   8.3 Nuclear Spin Based Quantum Computers

9.0 Molecular and Biological Memories
   9.1 Redox Active Molecular Memories
   9.2 Molecular Quantum Cellular Automata
   9.3 Molecular Memories using DNA Templated Wiring
   9.4 Nanowires and Nanotubes

10.0 Single Electron Memories

11.0 Negative Resistance RAMs
   11.1 Overview of Negative Resistance Memories
   11.2 Thyristor RAM (T-RAM)
   11.3 SOI MOSFET Negative Differential Conductance Device

12.0 Micro-Electrical-Mechanical System (MEMS) Memories
12.1 MEMS Cantilever Memory
12.2 Nano Electro Mechanical Systems (NEMS)

Bibliography

DESCRIPTION | CONTENTS

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