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Trends in Embedded DRAMs, October 2007
Deep Trench, Planar, Shallow Trench, MIM capacitor DRAMs, and Floating Body DRAMs

Embedded DRAMs continue to be used in SoC and processor chips for high bandwidth and low power applications which require dense RAM memory. Two types of eDRAMs are in continued development: traditional 1T1C DRAMs and the new 1T Floating Body (FB) DRAMs on SOI substrates. This report discusses recent announcements of the technologies and products in these two technologies by vendor. It also discusses applications that have been announced recently for chips with embedded DRAMs. 60+ pages.

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Table of Contents

1.0 Overview of eDRAM Chips 1T1C and Floating Body

2.0 Embedded DRAM Applications and Market
2.1 Overview of eDRAM Applications
2.2 Networking eDRAM Applications
  2.2.1 Switches
2.3 Wireless eDRAM Applications
  2.3.1 Overview of Wireless/Cell Phone eDRAM Applications
  2.3.2 Multimedia Cell Phones and Camera Phones
  2.3.3 LCD Controllers in Multimedia Cell Phones
  2.3.4 Conference Call Feature in Mobile Phones
  2.3.5 3D Graphics for Mobile Handhelds
  2.3.6 CMOS EDGE BaseBand Processor
2.4 Consumer Entertainment Systems
  2.4.1 Consumer Video Cameras
2.5 Gaming Systems
  2.5.1 Overview of Gaming System Chips with eDRAM
  2.5.2 Video Game Consoles
2.6 Graphics Controllers
2.7 Televisions
2.7.1 Encoder Chip for HDTV-1080p
2.7.2 Television Enabled PDA
2.8 Solid State Disks

3.0 Overview of Embedded DRAM Technology Today
3.1 Types of Embedded DRAM cells
3.2 Planar Capacitors for eDRAM
3.3 Shallow Trench Capacitors for eDRAM
3.4 MIM Capacitor eDRAM Cells
3.5 Basics of Floating Body DRAMs

4.0 Companies Developing or Supplying Chips with eDRAM
4.1 Chartered Semiconductor
4.2 Fujitsu
  4.2.1 Video Processing Chip with Embedded FCRAM:Fujitsu
  4.2.2 Fujitsu 65 nm eDRAM Using Shallow Trench Capacitor Cell
4.3 IBM
  4.3.1 IBM Technology Alliance
  4.3.2 IBM eDRAM in 45 nm Technology Logic
  4.3.3 IBM 65 nm Embedded DRAM Cell Using Deep Trench on SOI
  4.3.4 Low Cost Adder CMOS Transistor Based Cells : IBM
4.4 LSI Logic
  4.4.1 LSI Logic 90 nm eDRAM Macro
4.5 NEC
  4.5.1 NEC Technology Roadmap for eDRAM
  4.5.2 NEC 55 nm ASIC Process with eDRAM
  4.5.3 90 nm NEC MIM Capacitor Technology:
  4.5.4 NEC 130 nm eDRAM Process
  4.5.5 NEC 150 nm eDRAM Technology
  4.5.6 Summary of NEC Key eDRAM Cell Technologies:
4.6 NXP/Philips Semiconductor
4.7 Qimonda
4.8 Renesas and Matsushita) :
4.9 Samsung
4.10 SMIC
4.11 ST Microelectronics
4.12 Sony
4.13 Toshiba
  4.13.1 Some Toshiba Applications Chips with eDRAM
  4.13.2 Toshiba 65 nm eDRAM Macro
  4.13.3 Toshiba 90 nm eDRAM Macro
4.14 TSMC
  4.14.1 Overview of TSMC 1T eDRAM Capacitors:
  4.14.2 TSMC 1T eDRAM in 65 nm Technology
  4.14.3 TSMC 1T eDRAM in 90 nm Technology
  4.14.4 TSMC 1T eDRAM in 130 nm Technology
4.15 UMC
  4.15.1 UMC eDRAM in 130 nm Technology

5.0 Floating Body DRAM: Partially Depleted SOI
5.1 Innovative Silicon ZRAM FB-RAM on PD-SOI
  5.1.1 Overview Of ISi FB-DRAM
  5.1.2 Innovative Silicon 65nm/45nm ZRAM FB-RAM Technology
  5.1.3 ISi SER for ZRAM FB-RAM Technology
  5.1.4 ISi 100nm/90nm Technology
5.2 FB DRAM on PD-SOI:Fujitsu
5.3 University Research on FB-DRAM with PD-SOI
  5.3.1 FB-DRAM with Buried Oxide and Sidewall Block Oxide

6.0 Floating Body DRAM Cell on Fully Depleted SOI
6.1 Toshiba Fully Depleted SOI Floating Body DRAM
  6.1.1 128-Mb 55 nm FD-SOI FB-DRAM :Toshiba
  6.1.2 Fully Depleted 90 nm SOI FB-DRAM with Scaling to 32 nm: Toshiba
  6.1.3 90 nm FD-SOI Floating Body DRAM:Toshiba
6.2 Freescale Analytical Model of the FD-SOI FB-RAM Cell
6.3 Renesas Two Transistor Capacitorless DRAM

7.0 Innovative FB-DRAM Devices
7.1 Intel Double Gate FB-DRAM on PD-SOI.
7.2 FB-DRAM in SOONO Technology: Samsung

8.0 IP Companies and Embedded DRAMs
8.1 Embedded DRAM with SRAM Periphery
  8.1.1 MoSys 1T SRAM IP:
  8.1.2 Novelics coolSRAM-1T
8.2 Floating Body RAM IP
  8.2.1 Innovative Silicon Z-RAM Technology
  8.2.2 Renesas/EMT TTRAM Technology

Bibliography

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