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Nanocrystal Enhanced Memory Product, Development and Technology
(NC in NOR, SONOS, ReRAM, PCM, Nanowire, Organic TFT, Vertical)
August 2012

At least one split-gate NOR flash memory using thin film nanocrystals for storage is in production. Recent research on use of nanocrystals includes improving performance in NOR, NAND and SONOS Flash Memory as well as in ReRAM and Phase Change Memory. Scaled vertical nanowire memory and trigate/FinFET memories benefit from nanocrystals in improved endurance, retention and high temperature operation. Dual layer metal nanocrystals improve memory window over that of single Si-NC. High-k blocking oxide improves memory window, retention and P/E speed.. Fabrication, assembly, reliability, test/characterization, modeling and simulation have all been explored for NC memories. Basic research continues.

80+ pages.

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Table of Contents

Executive Summary

1. Overview of Current Trends in Nanocrystal Memory

2.0 NanoCrystal Cells in NOR Flash Memory Arrays

• 2.1 90 nm Node MCU with Embedded Silicon NC Flash (Freescale, Global Foundries)
• 2.2 Split-Gate Nanocrystal Cells in embedded NOR Flash memory (Freescale)
• 2.3 Scalability to 20 nm of Split-gate Charge Trap Memories (CEA, ST Micro, CNRS)
• 2.4 Nanocrystal Split Gate Flash for Fast, Low Power MCU (Freescale, Global Foundries)
• 2.5 Thin Film NC Flash Storage in 90 nm 32-bit MCU (Freescale)
• 2.6 Overview of the Freescale NC Embedded Memory (Denali Memory Report)
• 2.7 90 nm Thin Film NC Embedded Flash Memory (Freescale)

3.0 Nanocrystal Memories in NAND Flash

• 3.1 Dual Layer Pt NC for NAND 2/3 bit/cell Operation (IIT Bombay, Applied Materials)

4.0 Using NanoCrystals in ReRAM Memories

• 4.1 NC TiO2 ReRAM with TaON Buffer Layer (NTHU)
• 4.2 Organic Programmable Au/Alq3/Au NC/Alq3/Al ReRAM (IME/CAS,Anhui U.)
• 4.3 Al2O3-based ReRAM with Embedded Ruthenium Nanocrystals (Fudan U.)
• 4.4 ReRAM Using Quantum Dot and Metal Oxide (Dongguk Univ.)
• 4.5 ReRAM using Nickel NC Embedded in TiO2 Film (IIT Kharagput)
• 4.6 ReRAM with Au NC in PVK/PEDOT-PSS with Al Electrodes (Nat. Cheng Kung U)
• 4.7 ReRAM with Metal NC in Al2O3/SiO2 Gate Stack (Nanyang, A*STAR, IIT Bombay)
• 4.8 ZrO2 ReRAM with Cu NC Layer (Chinese Acad. of Sci., Anjui U., U. of Albany)

5.0 Using Nanocrystals to Improve SONOS/MONOS Memory Characteristics

• 5.1 Fast P/E TFT TANOS Flash with Silicon NC (NTHU)
• 5.2 Charge Trapping SONOS-Type High-k NC Flash Memory Stack (Nanjing U.)
• 5.3 NV FG Memory with Sb2Te NC in AgInSbTe-SiO2 nanocomposites (NCTU)
• 5.4 PN-Diode SONOS TFT NVM with Embedded Si NC (Nat. Chiao Tung Univ.)
• 5.5 SONOS Memory with Embedded Si NC (Nat. Chiao Tung U, Feng Chia U)
• 5.6 NC/Charge Trapping NVM with High-k Dielectrics (CEA/LETI, IMEP-CNRS)
• 5.7 SONOS Non-Volatile Memory in 10 nm Node using Si NC (Toshiba)

6.0 Nanocrystals in Phase Change Memory

• 6.1 Phase Change Memory Using Solution Processed GeTeNC (Stanford U., L.B. Nat.Lab)

7. 0 Vertical Memories Using Nanocrystals

• 7.1 Triangular Nonplanar NiSi NC Flash for Improved Scaling (Uof Calif., Riverside, Nanjing U)
• 7.2 Trigate Nanowire Flash Memory with Si-NC CT Layer (NCTU, NTHU)
• 7.3 Trigate HfO2 Nanocrystal Memory on SOI (NUUM)
• 7.4 Trigate/FinFET Split-Gate Flash Memory with Suppressed Over-Erase (Meiji U.,AIST)
• 7.5 Nanocrystal Location in Nanowire GAA SONOS Memories (National Chiao Tung U.)
• 7.6 Vertical Si Nanowire GAA Memory Using Si NC (A*STAR, Nanyang U, U of Bologna)

8. Plastic, Polymer, Transparent and Flexible Memory Using Nanocrystals

• 8.1 Endurance of Au NC a-IGZO Transparent Flash (KookminU, Samsung, Seoul N.U, MyongiiU)
• 8.2 Organic Programmable Au/Alq3/Au NC/Alq3/Al ReRAM (IME/CAS,Anhui U.)
• 8.3 Bilayer Stacked Organic ReRAM with Au NC (Nat. Cheng Kung University)
• 8.4 Thin Film NVM with IGZO NC Trapping Layer (National Chiao Tung Univ.)
• 8.5 NC Organic Memory Transistor Used as a Spiking Synapse (CEA, IEMN, CNRS)
• 8.6 Polymer NV Memory Cell with Ag NC (Hanyang University)
• 8.7 Functional Model of Au NC Organic FET Memory (CEA)
• 8.8 Resistive Switching of Polystyrene Device with Au NC (Nat. U. of Singapore)
• 8.9 Low Temperature Pentacene Organic Au NanoParticle Memory Device (Kookmin U.)

9. Multiple Layer and Multi-Gate Nanocrystal Memories

• 9.1 Arrays of Magnetic Nanostructures Using Co/Pt Multilayers (KUL)
• 9.2 Dual Layer Metal Nanocrystal Embedded High-K/SiO2 Gate Stack (NanyangTU)
• 9.3 Double Si-NC/SiN & HfAlO Hybrid NV Memory (CEA-LETI-Minatec, IMEP-CNRS, INPG)
• 9.4 Metal NC 2-Layer Gate Stack Mechanisms (Nanyang TU, Singapore UofT&D, IIT Bombay)
• 9.5 Reliability of Single and Dual Layer Pt. NC NAND Flash(IIT Bombay, Applied Mat.)
• 9.6 Effect of C-V Traits of Two Layer NiSi NC with Si3N4 Tunnel Barrier(Han Yang U.)
• 9.7 Comparison of Single NC and Double NC NVM Structures (Lashkaryov Inst.)
• 9.8 Multiple NC Layer Hybrid Silicon NC/SiN Memory Structure (CEA/LETI)

10.0 High-K Oxide with Nanocrystal Memory

• 10.1 Overview of use of High-K Blocking Oxide for Nanocrystal Memory
• 10.2 Au NC in Al2O3 Film for Tunnel/Blocking Oxides for NV Memory (Hanyang Univ.)
• 10.3 Low Voltage Pd-Al2O3-Si Capacitors with Ru-Based NC (Fudan University)
• 10.4 Charge Controlled Modulation in Al-rich Al2O3 WORM Memory (NanyangTU, U. EST)
• 10.5 Si NC embedded in HfSixO2 with Large Memory Window (Chinese Acad. of Sci.)
• 10.6 Flash/Resistive Memories with IrOx NC in High-k Al2O3 Film (Chang Gung U)
• 10.7 Flash/Resistive Memories with IrOx NC in High-k Al2O3 Film (Chang Gung U)
• 10.8 NV Memory Using Thin TixAlyOz Film NC Layer in a-Al2O3 (Nanjing)
• 10.9 Memory Properties of ZnO NC in High-k Zr doped HfO (Texas A&M Univ.)

11.0 Memory Devices with Various Metal Nanocrystals

• 11.1 Memory Devices with Gold (Au) Nanocrystals
  • 11.1.1 NC Memory with Al2O3 Shell on Au Core (IME CAS)
  • 11.1.2 LV NV Au NC Operating Memory with high-k HfO2 Tunnel Ox. (Uof Kaohsiung)
  • 11.1.3 Self-Rectifying Resistive Cross-Bar Memory Using Gold NC (Chinese Acad. of Sci.)
• 11.2 Cu-ZnO Nanocrystal MIS Devices
  • 11.2.1 NV Memory Using Au/Cu-ZnO/p-Si MIS Devices (IACS Kolkata)
• 11.3 Gd NanoCrystal Non-Volatile Memory
  • 11.3.1 HfO2 Trapping Layer in Ge2O3 NC with Multi-Tunneling Layers (Chang Gung U.)
  • 11.3.2 Effect of CF4 Plasma Treatment on Gd2O3 NC NVM (Chang Gung Univ.)
  • 11.3.3 Si/Ge NC in Epitaxial Gd2O3 NV Memory Using MBE (Leibniz U and U of Leuven)
  • 11.3.4 Band Engineering of Gd2O3 NC by CF4 Plasma Treatment (Chang Gung U.)
• 11.4 Germanium NanoCrystals
  • 11.4.1 Ge/Si Hetero-NC NVM with Improved Performance Over Si NC(U.of Calif.)
  • 11.4.2 Electron and Hole Retention Times in Ge NC Direct Tunneling Memory (Leibniz U)
• 11.5 Ru NC In Non-Volatile Memories
  • 11.5.1 Formation Process for Memory Using ALD Deposited Ru NC (Seoul Nat. Univ.)
  • 11.5.2 Floating Gate Memories using Ruthenium Nanocrystals (U. of Texas, Austin)
• 11.6 Platinum Nano Crystals in Non-Volatile Memory
  • 11.6.1 Dual Layer Pt NC Flash for NAND Flash (IIT Bombay, Applied Materials)
• 11.7 SiOx Nano-Crystals in Non-Volatile Memory
  • 11.7.1 MOS Switching Using SiOx NC in a SiOx matrix (Rice University)
  • 11.7.2 TixZrySixO NC NV (Nat. U. Koahsiung, NCTU, Feng ChiaU. Nat. Chin-Yi U)

12.0 Silicide Nanocrystals in Non-Volatile Memory

• 12.1 TiSi2 NC MOS FET Memory (University of Calif. Riverside)
• 12.2 Dense PtSi NC for Low Power Memory Application (U.of California, Riverside)

13.0 Physical Properties and Fabrication of NC Memories

• 13.1 Self Assembled Co/Al2O3 Co-Polymer NC (University of Calif., Riverside)
• 13.2 Effect of CF4 Plasma Treatment on Gd2O3 NC NVM (Chang Gung Univ.)
• 13.3 VSS Growth of NiSi2 NC for NVM Application (U. of Calif., Riverside)
• 13.4 Growing Si NC for NV Memory in Gd2O3 Using Molecular Beam Epitaxy (Leibniz U.)
• 13.5 Sol-Gel NC Memory Using NiCl5, ZrCl5, SiCl5, and GeCl5 (Nat. Chiao Tung U.)

14.0 Reliability of Nanocrystal Memories

• 14.1 Reliability of Metal NC in Dual Layer Stack NVM (Nanyang Tech. U, IIT, Bombay)
• 14.2 Automatic Recovery of Heat Induced Leakage in Ru NC Al2O3/SiO Stack (NanyangU)
• 14.3 Pre-Cycling A Silicon NC memory with High P/E Voltage (Chinese Acad. of Sci.)
• 14.4 Data Retention Modeling of Si NC Flash Memory (IIT, Kanpur)
• 14.5 Effect of High-k Gate Dielectrics and Metal NC on Retention (Univ. of Missouri)
• 14.6 Dielectric Breakdown in MOS with embedded Nanocrystals (Nanyang, Tech, IIT)

15.0 Test and Characterization of Nanocrystal Memory

• 15.1 Single Electron Charging/Discharging of Ge NC Memories (U. Fed. do Ceara Fort.)
• 15.2 Programming Method for Si NC to Improve Memory Window (Chinese Acad. of Sci.)

16. Modeling and Simulation of Nanocrystal Memories

• 16.1 Metal & Semiconductor Mechanisms of a Floating Gate NVM NC (U. of Strasbourg)
• 16.2 Quantum Model of Scaled NC NV Memory (NCTU)

17.0 Basic Research into Nanocrystal Memories

• 17.1 NV Memory Using Pt NC and Negative Differential Resistance (Tech-Israel IT Haifa)
• 17.2 Strain Shape Change in Self-Organized Endotaxial CoSi2/Si(100) (Ind. Assn.Cult. of Sci.)
• 17.3 High Density Nanocrystal Array Using Listeria Ferritin (Nara IST)
• 17.4 NC Floating Gate NVM with Co- Bionanodots in HfO2 (Nara Inst. of Sci.&Tech)
• 17.5 Quantum Dots/Wells Using NC Grown in Gd2O3 Using MBE (Leibniz U.)

Bibliography

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