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A Memory Strategies Focus Report

Ferroelectric Memories, March 2007
(market, applications, developers & vendors, reliability, organic FeFETs, alternative ferroelectric circuits, materials research)

This report covers market and applications for FeRAM products along with developers and vendors of ferroelectric memories. The traditional transistor plus capacitor FeRAMs continue to be used in applications such as smart cards and ID cards as well as targeting RFID, automotive and space. Other ferroelectric memory devices such as organic polymer ferroelectric FeFET memories are exciting new interest as well. At least 10 companies continue to work on ferroelectric memories for various applications such as fast, low power memory technology for embedding in SoC. Several novel ferroelectric memory applications have been discussed such as high density probe memory and associative memory. Multi-bit FeRAMs have been shown which could help with density and scaling issues.  50+ pages.

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Table of Contents - Ferroelectric Memories, March 2007
(markets, applications, developers & vendors, reliability, organic FeFETs, alternative ferroelectric circuits, materials research)

1.0 Trends in FeRAMs

2.0 FeRAM Applications and Markets
2.1 Overview of FeRAM Applications
2.2 RFID FeRAM Applications
2.3 Smart Card FeRAM Applications
  2.3.1 Overview of the Potential Smart Card FeRAM Market
  2.3.2 Electronic Money (Contactless ID Card)
2.4 Encryption Processors
2.5 Industrial Systems
2.6 Office Equipment
2.7 Consumer
  2.7.1 Portable Electronic Systems
  2.7.2 Cell Phone LSI with Embedded FeRAM
2.8 Automotive Systems
2.9 Military and Space Applications

3.0. Suppliers, Developers and Potential Developers of FeRAM
3.1 Celis Semiconductor
3.2. Fujitsu FeRAM
3.3 Hynix
3.4 Matsushita
3.5 NEC
3.6 Ramtron:
3.7 Samsung
3.8 Seiko-Epson
3.9 ST Microelectronics
3.10 Symetrix
  3.10.1 Symetric and Oki SOI FeRAM
  3.10.2 Symetrix and IOTA 3T2C Cell
3.11 Texas Instruments (with Agilent and Ramtron)
3.12 Toshiba

4.0 FeRAM Reliability
4.1 Package Level Reliability for 64-Mb FeRAM
4.2 Imprint Mechanism for PZT FeRAM Using Oxygen Vacancy Screening Model
4.3 An Endurance Model using Voltage Acceleration (Ramtron)
4.4 Analysis of Static Imprint Failure
4.5 Low Voltage eFeRAM in 180 nm Logic Technology

5.0 Ferroelectric Materials Developments
5.1 Investigation of Domain Wall Creep in Ferroelectric Materials
5.2 Simulation of a Multilayer Stack Ferroelectric NV Memory
5.3 Study of Thickness-Induced Permittivity Collapse in Thin Film Ferroelectrics
5.4 Slow Switching Effect Induced by Schottky Potential in FeRAM Capacitor
5.5 PZTN Thin Films for FeRAM

6.0 Alternative Circuits Using Ferroelectric Memory
6.1 High Density Probe Based Memory
6.1 Logic Circuits Using Ferroelectrics
6.2 Associative Memories Using Ferroelectric FET

7.0 FET Type FeRAMs in CMOS

8.0 Organic Ferroelectric-Like FeFET Memories
8.1 Organic FeFET Using a Flexible Substrate Film
8.2 FeFET Using a Semicrystalline Co-polymer Ferroelectric
8.3 FeFET CoPolymer in 180 nm Technology
8.4 Organic DNA FeFET with Flexible Polyimide Substrate
8.5 Langmuir-Blodgett Films for Making FeRAM Memories
8.6 Ferroelectric-Like Pentacene FETs
8.7 Polymer Ferroelectrics

9.0 FeRAM Cell and Process Summary
9.1 Overview of FeRAM Cell Sizes and Types
9.2 FeRAM Cell Sizes vs. Technology Nodes
9.3 Mask Layers Added to Base CMOS Process for FeRAM
9.4 Number of Additional Mask Layers Compared to Other Embedded Memories

10.0 FeRAM Cell Types
10.1 Overview of FeRAM Cell Types
10.2 1T1C FeRAM Cell
10.3 Chain FeRAM Cell Architecture (Toshiba and Infineon)
10.4 Multilevel FeRAM Cells
  10.4.1 Three Level FeRAM Cell

Bibliography

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