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A Memory Strategies Focus Report

Trends in Ferroelectric Memories (FeRAM, FRAM) Feb. 2009
(applications, reliability, materials, vendors)

FeRAM applications continue to expand due to the fast read/write capability of the device and its low operating power. These applications now include RFID and smart card, electronic security, industrial control and data logging, automotive cabin and under-the-hood applications, and portable medical devices. Efforts continue to improve FeRAM reliability for both chip and package. Materials developments include continued discussion of new materials such as those without lead as well as those with improved characteristics. At least nine suppliers now develop or supply the ferroelectric memory devices. Foundries now include: Fujitsu, TI and IBM as well as those processing the part in-house such as Toshiba, Samsung, and Hynix. 40+ pages

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Table of Contents

1.0 Trends in FeRAMs

2.0 FeRAM Applications and Markets
2.1 Overview of FeRAM Applications
2.2 RFID FeRAM Applications
2.3 Smart Card FeRAM Applications
  2.3.1 Overview of the Potential Smart Card FeRAM Market
  2.3.2 Electronic Security (Passports)
2.4 Digital Television HDMI Port Display Data Memory
2.5 Industrial Systems
  2.5.1 Industrial Control Systems
  2.5.2 Digital Event Data Recorder
  2.5.3 Safe Pressure Transmitters for Chemical Processing Equipment
2.6 Office Equipment
2.7 Portable Consumer Electronic Systems
2.8 Automotive Systems
  2.8.1 Automotive Cabin Applications
  2.8.2 Automotive PowerTrain Applications
  2.8.3 Automotive Under-The-Hood Applications
2.9 Military and Space Applications
2.10 Real-Time Parameter Storage
2.11 Portable Medical Systems

3.0 FeRAM Reliability and Electrical Characteristics
3.1 Reliability Testing of a 4-Mb FeRAM in 130 nm CMOS (Texas Instruments)
3.2 Methods to Ensure FeRAM Reliability in Production (Samsung)
3.3 Effect of Amplifier Sense Margin on Read Accuracy
3.4 AlOx Diffusion Barrier During Forming Gas Anneal (U. of Texas, Dallas)
3.5 Reliability for 4-Mb FeRAM (TI, Ramtron)
3.6 Threshold Distribution for Pt/SBT/Hf-Al-O/Si FeFETS (AIST, Ibaraki)
3.7 Package Level Reliability for 64-Mb FeRAM

4.0 Ferroelectric Materials Developments
4.1 Process Improvement for PbTiO3 Ferroelectric Materials (KAIST)
4.2 Optimization of PZT Plasma Etch Process
4.3 Key Technologies for 180 nm FeRAMS (Samsung)
4.4 Metal Organic CVD for Ferroelectic Oxides for FeRAMS
4.5 Ferroelectric Properties of BiLayered PZT/BNT and BNT/PZT (Nat. U. Singapore)
4.6 Investigation of Domain Wall Creep in Ferroelectric Materials
4.7 Simulation of a Multilayer Stack Ferroelectric NV Memory
4.8 Study of Thickness-Induced Permittivity Collapse in Thin Film Ferroelectrics

5.0 Alternative Circuits Using Ferroelectric Memory
5.1 High Density Probe Based Memory
5.2 FET Type FeRAMs in CMOS

6.0. Suppliers, Developers and Potential Developers of FeRAM
6.1 Celis Semiconductor
6.2. Fujitsu FeRAM
6.3 Hynix
6.4. Ramtron:
6.5 Rohm Ferroelectric Memory
6.6 Samsung
  6.6.1 130 nm FeRAM (Samsung)
  6.6.2 150 nm FeRAM (Samsung)
  6.6.3 FeRAM Reliability (Samsung)
6.7 Seiko-Epson
6.8 Texas Instruments
6.9 Toshiba
  6.9.1 Chain FeRAM Cell Architecture (Toshiba)
  6.9.2 128-Mb DDR2 Chain FeRAM

7.0 Ferroelectric Memory Research
7.1 Structural & Electrical Properties of Ferroelectric/ZnO Heterostructures(U. of EST China)
7.2 Ferroelectric dielectric & arcing breakdown & equivalent circuit models (Cambridge)

8.0 Organic Ferroelectric Memories
8.1 Organic Ferroelectric-Like FeFET Memories
8.2 Communication Sheets Using Organic InkJet Printed 3T FeRAM Cell (U. of Tokyo)

Bibliography:

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