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A Memory Strategies Focus Report on MRAM - New Report for 2008

Magnetic RAM (MRAM) Product & Technology, March 2008
Applications, Production Roadmaps, Technology, Reliability, Vendors/Developers

Applications and market of the MRAMs in production today are discussed along with projected production roadmaps from various companies. Technology development in the past two years have focused on further refinement of the Toggle Mode MTJ MRAM, multiple bits-per-cell MRAMs, spin torque transfer MRAMs, MRAMs with perpendicular magnetic elements, and nano-ring MRAMs. The advantages offered by embedded MRAMs in SoC and MCU are covered. Multiple studies of reliability and test of MRAMs are discussed along with a number of investigations of material properties for MRAMs and innovative MRAM cell architectures. Vendors and developers of MRAMs are listed along with their respective technologies.  85+ pages.
 

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Table of Contents - Magnetic RAM Product & Technology, March 2008

Executive Summary:

1.0 Overview of Current MRAM Market Potential

2.0 Current Magnetic RAM Applications
2.1 Automotive MRAM Applications
  2.1.1 Automotive Airbags
  2.1.2 Automotive Data Logging and Configuration Storage.
  2.1.3 Automotive Crash Recorders:
  2.1.4 Automotive Sensor Applications:
2.2 Mobile Phone MRAM Applications
2.3 Consumer Applications
  2.3.1 Gaming Machines:
  2.3.2 Entertainment Systems:
2.4 Encryption for Security Systems:
2.5 Rad Hard Military Applications
2.6 RFID Applications
2.7 MRAM Element in FPGA
2.8 Networking and Server Applications
2.9 Embedded MRAM Macro Applications
2.10 MRAM Packaging Options
2.11 FPGA Development Card

3.0 MRAM Production Roadmap
3.1 Crocus:
3.2 Freescale:
3.3 Grandis STT-RAM
3.4 Hitachi Spin-Torque Transfer MRAM
3.5 MicroMem
3.6 Renesas:
3.7 Samsung and Hynix (MRAM)

4.0 Field Switching MTJ MRAM: Investigations, Innovations and Relibility
4.1 Thermal Assisted MRAM Switching
  4.1.1 Influence of Pinning Field Dispersion of Coercivity (NVE)
  4.1.2 Joule Heating Enabled Switching of MRAMs (D-STAR)
  4.1.3 Blocking Temperature Switching of MRAMs (NVE)
  4.1.4 Thermal Select MRAM with Multi-Level Programming Capability (Altis)
4.2 Field Switching of MTJ MRAM using Toggle Mode
  4.2.1 Overview of Toggle Mode Switching Mechanism (Freescale)
  4.2.2 Variations of Orientation of the Free layer in Toggle Mode MRAMs (NEC)
  4.2.3 Study of Toggle Mode MRAM Dynamic Switching Behavior (Grandis, U. of Alabama)
  4.2.4 Operating Field Margin for Toggle Mode and Conventional MTJ MRAMs (Grandis)
  4.2.5 Wiggle Mode - A Self Reference Read During Toggle Mode (TSMC)
  4.2.6 Toggle Mode MRAM with Direct Write Capability (D-STAR)
4.3 Methods for Lowering MTJ MRAM Write Current in Field Switching MRAMs
  4.3.1 Lower Write Current by Cladding the Write Lines (NEC and Toshiba)
  4.3.2 A Negative Pulse Scheme to Reduce Write Current (ERSO/ITRI)
4.4 Effect of MTJ Shape on Various MRAM Cell Characteristics
  4.4.1 Test and Write Margin of an MRAM with Propeller Shaped MTJ (Toshiba)
  4.4.2 Write Disturb Improvement in C-Shaped Cells (Toshiba)
  4.4.3 Effect of MTJ Shape on Write Current (Toshiba and NEC)
4.5 Test and Reliability in MTJ Field Switching MRAMs
  4.5.1 Effects of Weak Magnetostatic Interactions Among Adjacent MRAM Cells (Husko)
  4.5.2 Write Disturb Fault Model for MRAM (Nat. Tsing Hua U.)
  4.5.3 Improving Write Margin Using Magnetic cross-talk (Toshiba)
  4.5.4 Reliability of MgO vs. AlOx Tunneling Barriers in MTJ MRAM (Fujitsu)
  4.5.5 Resistance Drift Behavior of MTJ MRAMs with AlOx Tunnel Oxide (Freescale)
  4.5.6 Signal Margin Screening for Large MRAMs (Altis/Infineon)

5.0 Perpendicular MTJ MRAMS
5.1 Thick Magnetic Material MRAM with Perpendicular Memory Element (Carnegie Mellon)
5.2 MTJ Elements With a MgO Barrier for Perpendicular MRAM ( U. of Tokyo)
5.3 Double Barrier Layer Perpendicular MTJ structure (Taiwan SPIN Center)
5.4 Magnetization Reversal for Perpendicular MRAM (Tokyo Inst. of Tech.)

6.0 Spin Transfer Switching MRAM
6.1 Overview of Electron Spin Torque Switching
6.2 Spin Transfer Torque MRAM (Hitachi)
6.3 Spin-Torque Transfer (STT) RAM (Grandis)
6.4 Domain Wall Spin Polarized MRAM Cell for Embedded Applications (NEC)
6.5 Reliability of MgO vs. AlOx Tunneling Barriers in ST MTJ MRAM (Toshiba)
6.6 MRAM with Spin Transfer Write and Perpendicular Anisotropy
  6.6.1 Spin transfer MRAM using Perpendicular Anisotropy (Qimonda, Siemens, Altis)
  6.6.2 GMR MRAM Using Perpendicular Magnetization and Spin Injection Write(AIST)
  6.6.3 Combined Perpendicular Magnetic Technology and Spin Transfer Switching(Toshiba)

7.0 Research in Spin Transfer Write
7.1 Switching Current Variation for Spin Injection and for Field Writing (Toshiba)
7.2 Spin Torque Switching with Various Thickness of MgO (Taiwan Spin, N. Yunlin U.)

8.0 Circular Ring Element MRAMS
8.1 Nanoring MRAMs (Chinese Academy of Science)
8.2 Vortex Formation in Circular Ring Elements Due to Shape Effects (U. of Illinois)
8.3 Nanoring MRAMs (Johns Hopkins and Carnegie Mellon U.)

9.0 Hall Effect MRAMs (Micromem)

10.0 MRAM Research Issues
10.1 Spin Valve Research Issues
  10.1.1 Theory of Lateral Spin Valves /Spin Accumulation MRAMs (U.S. Naval Res. Lab)
  10.1.2 Simulation Study of Physical Factors Involved in Switching Spin Valves

11.0 MTJ MRAM Materials Research Issues
11.1 Effect on MR of Various Capping Materials used on MTJ's (ERSO/ITRI)
11.2 Using Ta seed Layer in SAF to Improve Properties (NEC & Toshiba)
11.3 Using MgO for Tunneling Material to Improve TMR in MTJ MRAM(Freescale)
11.4 Oxidizing MTJ Free Layer to Reduce Switching Field Variation (Mitsubishi, Renesas)
11.5 Spintronics Research Initiatives (U. of Calif. and Stanford)

12.0 Innovative MRAM Cell Architectures
12.1 MRAM Cells for High Speed Circuit Macros (NEC)
  12.1.1 2T1MJT Cell for Write Current Control
  12.1.2 5T2MTJ Cell for GHz Access Time

13.0 Multiple Bit-Per-Cell MRAMs
13.1 Four-Bit MRAM Cell using Two Stacked MRAM Cells (MagLabs)
13.2 Four State MRAM Using Easy Axes Cubic Anisotropy in {110} Direction (Kakkaido U.)
13.3 Dual-Bit MRAM Cell Using Two stacked MRAM Cells (MagLabs)
13.4 1T2MTJ MRAM Four State Cell for Embedded Applications (TSMC/ERSO)

14.0 MRAM Architectural Innovations
14.1 Fork Wiring (Toshiba. NEC)
14.2 Sense Amplifier for MRAM Cross-Point Arrays (U. of California, Boise State U.)
14.3 MTJ's as Storage Elements in an FPGA (U. of. Paris South)

15.0 MRAM Vendors and Developers
15.1 Crocus
15.2 Freescale
  15.2.1 Freescale Production MTJ MRAM Devices
  15.2.2 Freescale Technology Development
15.3 Fujitsu MTJ MRAM
15.4 Altis/Qimonda
15.5 Grandis STT-RAM
15.6 Hitachi Spin Torque Transfer MRAM
15.7 Honeywell
15.8 IBM and TKD
15.9 MagLabs Dual-Bit MTJ MRAMS
15.10 Micromem MRAMs
15.11 NEC
15.12 Non-Volatile Electronics (NVE)
15.13 Renesas
15.14 Samsung and Hynix (MRAM)
15.15 Sony MRAM
15.16 Toshiba
15.17 Toshiba and NEC MTJ Joint Process Development
15.18 TSMC and ERSO Labs

16.0 Suppliers of MRAM Manufacturing Equipment
16.1 Aviza Technology
16.2 Tegal
16.3 Singulus Technologies

Bibliography

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