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A Memory Strategies Focus Report on MRAM - New Report for 2009

Magnetic RAM (MRAM) Product, Development & Technology, March 2009
(STT-MRAM, Toggle/Field Write MRAM, Hybrid MTJ-CMOS Logic, Test Applications, Roadmaps, Reliability, Modeling, Multi-Bit, Architecture)

MRAM Product, Development & Technology, March 2009, is now available. This report discusses applications of MRAMs in production today along with projected production roadmaps for MRAMs  from various companies. Several companies have continued to work on variations of the field programmable MTJ MRAM.  One has introduced a product line of standalone MRAM components.  Another has shown low current field programmable MRAM macro's for embedding in SoC. There has been work on multiple-bit-per-cell field write MRAMs.  Recent development  has also focused  on the Spin Torque Transfer MRAMs (STT-MRAMs).  Efforts on spin-torque-transfer MRAM technology with perpendicular magnetic elements appear to be nearing production. Numerous examples of MTJ elements used in various CMOS logic circuits have been discussed.   A 64Mb STT-MRAM in 90 nm technology is considered currently feasible.  STT-MRAM is generally expected in production in the 2010 timeframe.  Multiple studies of simulations and modeling of MRAM process technology, and of reliability and test of MRAMs are discussed. Vendors and developers of MRAMs are listed along with their respective technologies.  Pages: 90+

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Table of Contents - Magnetic RAM Product, Development & Technology, March 2009

Table of Contents

1.0 Overview of Current MRAM Product, Development and Technology

2.0 Current Magnetic RAM Applications

3.0 MRAM Production Roadmap

4.0 Overview of Spintronic Theory

5.0 Field Switching MTJ MRAM

6.0 Perpendicular MTJ MRAMS

7.0 Multiple Bit-Per-Cell Field Program MRAMs

8.0 Field Program MRAM Architectural Innovations

9.0 Spin Transfer Switching MRAM

10.0 Domain Wall Spin Polarized MRAM Cell for Embedded Applications (NEC)

11.0 MRAM with Spin Transfer Write and Perpendicular Anisotropy

12.0 Simulation and Modeling of Spin Write MRAMs

13.0 Test and Reliability Issues for Spin Program MRAM

14.0 Circular Ring Element MRAMS

15.0 Hall Effect MRAMs (Micromem)

16.0 Logic Circuits Using MRAM

17.0 MTJ MRAM Materials and Device Research Issues

18.0 MRAM Vendors and Developers

Bibliography

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STT-MRAM, Toggle/Field Write MRAM, Hybrid MTJ-CMOS Logic, Test Applications,
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