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Nanocrystal Flash Memory Technology & Development
(NC in NAND, NOR, SONOS, ReRAM, Nanowire, Organic TFT)
June 2011

Development efforts continue in nanocrystal non-volatile memories. Nanocrystal memories are in production for embedding in microprocessors. Both NOR and NAND memories using nanocrystals for storage are in development.. Particular effort has been focused on development of flash cells with double layers of nanocrystals for improved performance. Development also continues on high-k blocking materials and metal and metal silicide nanocrystals. Nanocrystals have been used to improve performance of charge trapping cells and of resistive memory cells (ReRAMs). Plastic Organic TFT transistors are being developed which use nanocrystals for flexible memory storage.  75+ pages.

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Table of Contents

Executive Summary

1.0 Overview of Current Trends in Nanocrystal Memory

2.0 NanoCrystal Cells in NOR Flash Memory Arrays

• 2.1 Overview of the Freescale NC Embedded Memory (Denali Memory Report)
• 2.2 90 nm Thin Film NC Embedded Flash Memory (Freescale)
• 2.3 Split-Gate 128 KB NOR Flash (Freescale)
• 2.2 Cylindrical Bit Cell for 90 nm 4-Mb Si-NC NOR Flash Memory (Numonyx)

2.3 32-Mb Nanocrystal Memory for Embedded NOR Flash

3.0 Nanocrystal Memories in NAND Flash

• 3.1 Dual Layer Pt NC for NAND 2/3 bit/cell Operation (IIT Bombay, Applied Materials)
• 3.2 Memory for NAND Flash with Single Layer Platinum NC (Indian Inst. of Tech.)
• 3.3 Pt Single and Double Layer NC Memories for <30nm NAND Flash (IIT, Mumbai)
• 3.4 Transient Behavior of NAND Nanodot Flash Cell (Micron, Yale U.)

4.0 Using NanoCrystals in ReRAM Memories

• 4.1 ReRAM Using Quantum Dot and Metal Oxide (Dongguk Univ.)
• 4.2 ReRAM using Nickel NC Embedded in TiO2 Film (IIT Kharagput)
• 4.3 Bilayer Stacked Organic ReRAM with Au NC (Nat. Cheng Kung University)
• 4.4 ReRAM with Metal NC in Al2O3/SiO2 Gate Stack(Nanyang, A*STAR, IIT Bombay)
• 4.5 ZrO2 ReRAM with Cu NC Layer (Chinese Acad. of Sci., Anjui U., U. of Albany)

5.0 Using Nanocrystals to Improve SONOS/MONOS Memory Characteristics

• 5.1 NC/Charge Trapping NVM with High-k Dielectrics (CEA/LETI, IMEP-CNRS)
• 5.2 PN-Diode SONOS TFT NVM with Embedded Si NC (Nat. Chiao Tung Univ.)
• 5.3 SONOS Memory with Embedded Si NC (Nat. Chiao Tung U, Feng Chia U)
• 5.4 SONOS Non-Volatile Memory in 10 nm Node using Si NC (Toshiba)
• 5.5 TiN NC 3-D Embedded in Al2O3 by Single Co-Sputtering Process (Nat. Tsing Hua U)
• 5.6 TiN NC 3-D Embedded in Si3N4 by Spinodal Phase Segragation (Nat. Tsing Hua U.)
• 5.7 Embedding Self-Assembled Si-NC in Storage Nitride (Feng Chia)

6.0 Vertical Memories Using Nanocrystals

• 6.1 Nanocrystal Location in Nanowire GAA SONOS Memories (National Chiao Tung U.)
• 6.2 Vertical Si Nanowire GAA Memory Using Si NC (A*STAR, Nanyang U, U of Bologna)
• 6.3 High-k Al2O3 as Blocking Oxide for 3-D Self-Assembled NC Memory (U. of Texas)

7.0 Plastic, Polymer and Flexible Memory Using Nanocrystals

• 7.1 Bilayer Stacked Organic ReRAM with Au NC (Nat. Cheng Kung University)
• 7.2 NC Organic FET Memory (CEA)
• 7.3 NC Organic Memory Transistor Used as a Spiking Synapse(CEA, IEMN, CNRS)
• 7.4 Functional Model of Au NC Organic FET Memory (CEA)
• 7.5 Polymer NV Memory Cell with Ag NC (Hanyang University)
• 7.6 Resistive Switching of Polystyrene Device with Au NC (Nat. U. of Singapore)
• 7.7 Low Temperature Pentacene Organic Au NanoParticle Memory Device (Kookmin U.)

8.0 Multiple Layer and Multi-Gate Nanocrystal Memories

• 8.1 Effect of C-V Traits of two layer NiSi NC with Si3N4 tunnel barrier(Han YangU.)
• 8.2 Reliability of Single and Dual Layer Pt. NC NAND Flash(IIT Bombay, Applied Mat.)
• 8.3 Comparison of Single NC and Double NC NVM Structures (Lashkaryov Inst.)
• 8.4 Multiple NC Layer Hybrid Silicon NC/SiN Memory Structure (CEA/LETI)
• 8.5 Memory Using Multilayered SiC Nanocrystals for Charge Storage (Hanyang)
• 8.6 Double Layer Stacked Heterometal NC of Ni/Au (KAIST)
• 8.7 Double Layer Metal NC Flash EEPROM for MLC Technology (IIT, Mumbai)
• 8.8 Single and Double Layer NC Memories in < 30 nm Node (IIT, Mumbai)
• 8.9 Double Layer Ni Metal and Silicon NC (Jiaotong University)

9.0 High-K Blocking Oxide for Nanocrystal Memory

• 9.1 Overview of use of High-K Blocking Oxide for Nanocrystal Memory
• 9.2 Si NC embedded in HfSixO2 with Large Memory Window (Chinese Acad. of Sci.)
• 9.3 Flash/Resistive Memories with IrOx NC in High-k Al2O3 Film(Chang Gung U)
• 9.4 NV Memory Using Thin TixAlyOz Film NC Layer in a-Al2O3 (Nanjing)
• 9.5 Memory Properties of ZnO NC in High-k Zr doped HfO (Texas A&M Univ.)
• 9.6 Memory Characteristics of HfO NC in Al2O3 film memory stacks(Chang Gung Univ.)
• 9.7 SOHOS using High-k Y2O3 nanocrystal film (Chang Gung U)
• 9.8 High-k Al2O3 as Blocking Oxide for 3-D Self-Assembled NC Memory (U. of Texas)
• 9.9 Study of Integrated Arrays of Silicon NC Memories Using HfAlOx IPD (CEA-LETI)
• 9.10 Multi-Gate FET with Al2O3 Blocking Dielectric and TiN NC (Nat. Chiao Tung U.)

10.0 Memory Devices with Germanium Nanocrystals

• 10.1 Ge/Si Hetero-NC NVM with Improved Performance Over Si NC(U.of Calif.)
• 10.2 Electron and Hole Retention Times in Ge NC Direct Tunneling Memory (Leibniz U)
• 10.3 Lanthanide Graded CT Stack with Ge Nanocrystals (Nanyang Tech. Univ.)
• 10.4 Charge Storage Characteristics of NiSiGe NC Memories (Nat.Chiao Tung U.)
• 10.5 Thin Film Transistor (TFT) Using Ge Nanocrystals (Nat. Chiao Tung Univ.)
• 10.6 NV Memory Using Ge NC in a SiNx Structure (Nat. Chiao Tung Univ.)
• 10.7 Using Ge-Si Shell Nanocrystal Structures for Improved Data Retention (U. of Texas)
• 10.8 Ge NC in a Tri-Layer Gate Stack Memory (Nat. Univ. of Singapore)

11.0 Ru NC In Non-Volatile Memories

• 11.1 Formation Process for Memory Using ALD Deposited Ru NC (Seoul Nat. Univ.)
• 11.2 Floating Gate Memories using Ruthenium Nanocrystals (U. of Texas, Austin)
• 11.3 Memory Using RuO2 Nanocrystals with Wide Memory Window (Chang Gung Univ.)

12.0 Platinum Nano Crystals in Non-Volatile Memory

• 12.1 Dual Layer Pt NC Flash for NAND Flash (IIT Bombay, Applied Materials)
• 12.2 Charge Storage of <2 nm Pt NC in Al2O3 layers (U. Missouri, N. Carolina State U.)
• 12.3 Memory Devices with Single Layer Gold and Platinum NC (Indian Inst. of Tech.)
• 12.4 Platinum Nanocrystals in Double Layer Configuration (Applied Materials, IIT)

13.0 Memory Devices with Gold (Au) Nanocrystals

• 13.1 LV NV Au NC Operating Memory with high-k HfO2 Tunnel Ox.(Uof Kaohsiung)
• 13.2 Self-Rectifying Resistive Cross-Bar Memory Using Gold NC (Chinese Acad. of Sci.)
• 13.3 Characterization of Devices with Au NC (IIT)

14.0 Other Metal Nano-Crystals in Non-Volatile Memory

• 14.1 Flash/Resistive Memories with IrOx NC in High-k Al2O3 Film(Chang Gung U)
• 14.2 MOS Switching Using SiOx NC in a SiOx matrix (Rice University)
• 14.3 TixZrySixO NC NV (Nat.U.Koahsiung, NCTU, Feng ChiaU.Nat.Chin-Yi U)
• 14.4 Band Engineering of Ga2O3 NC by CF4 Plasma Treatment(Chang Gung U.)
• 14.5 Sol-Gel NC Memory Using NiCl5, ZrCl5, SiCl5, and GeCl5 (Nat. Chiao Tung U.)
• 14.6 Floating Gate Memory Using Co NC with SiO2 Shells for Storage(U. of Texas,Austin)
• 14.7 Electrical Properties of InAs NC in SiO2 Memories (Inst. of Nanotech Lyon)
• 14.8 3D Finite Element Analysis of Metal Nanocrystal Memory (Cornell U.)
• 14.9 Reliability of Mo NC Memory with Ammonia Plasma Treatment(Nat. Chiao Tung.U)
• 14.10 TiN Nanocrystals Laminated with Al2O3 (Chang Gung Univ.)

15.0 Silicide Nanocrystals in Non-Volatile Memory

• 15.1 TiSi2 NC MOS FET Memory (University of Calif. Riverside)
• 15.2 Dense PtSi NC for Low Power Memory Application(U.of California, Riverside)
• 15.3 Pt Induced PtSi NC Process for Use in Nonvolatile Memory (U. of Calif., Riverside)
• 15.4 CoSi2-Coated Si Nanocrystal Memory Characteristics ( U of Calif., Riverside)

16.0 Physical Properties and Fabrication of NC Memories

• 16.1 Effect of CF4 Plasma Treatment on Gd2O3 NC NVM (Chang Gung Univ.)
• 16.2 VSS Growth of NiSi2 NC for NVM Application (U. of Calif., Riverside)
• 16.3 Growing Si NC for NV Memory in Gd2O3 Using Molecular Beam Epitaxy(LeibnizU.)
• 16.4 Method for Forming a Regular Array of SN in a Si3N4 Layer (U. de Sherbrooke)
• 16.5 Flash Memory using MPTMS Coated CVD deposited Cu NC(KookminU)
• 16.6 Methods of Fabrication of NC Memories: LP-CVD vs. Ion Implant (Peking U.)

17.0 Nanocrystal Self Assembly

• 17.1 Self Assembled Co/Al2O3 Co-Polymer NC (University of Calif., Riverside)
• 17.2 Self-Assemb Metal NC Memory with 15V Window(U.Calif., U.Wisconsin, U.Queensland)
• 17.3 Mapping Method for Nanocrystal Self Assembly (U. of Michigan)
• 17.4 Assembly of Stacked Colloidal Nanoparticles in AlO Templates (Myongju U.)
• 17.5 CdSe NC by Self-Assembled Di-Block Copolymer(MyongjuU, Seoul NU, YonseiU)
• 17.6 Nanoscale Ordering of Ge Nanocrystals (Queensland Univ. of Tech., Brisbane)
• 17.7 Si-NC Self Assembly using Dissociation of SiH2C12 Gas (Feng Chia U.)

18.0 Reliability of Nanocrystal Memories

• 18.1 Reliability of Dual Layer Metal NC NVM (Nanyang Tech. U, IIT, Bombay)
• 18.2 Automatic Recovery of Heat Induced Leakage in Ru NC Al2O3/SiO Stack(NanyangU)
• 18.3 Pre-Cycling A Silicon NC memory with High P/E Voltage (Chinese Acad. of Sci.)
• 18.4 Data Retention Modeling of Si NC Flash Memory (IIT, Kanpur)
• 18.5 Effect of High-k Gate Dielectrics and Metal NC on Retention (Univ. of Missouri)
• 18.6 Dielectric Breakdown in MOS with embedded Nanocrystals (Nanyang, Tech, IIT)
• 18.7 Reliability of Mo NC Memory with Ammonia Plasma Treatment (Nat. Chiao Tung. U)
• 18.8 Charge Loss Under Heavy Ion Radiation of NC Cell (Univ. of Padova)
• 18.9 Reliability of Crystalline & Amorphous Nanoparticles in MOS (U. Auto. de Baja)
• 18.10 Reliability Study of Nanocrystal Memories with High-k Dielectrics(Texas A&M U.)
• 18.11 Analysis of NC Memory Cells in Linear and Subthreshold Regions ( U. of Padova)

19.0 Test and Characterization of Nanocrystal Memory

• 19.1 Single Electron Charging/Discharging of Ge NC Memories (U. Fed. do Ceara Fort.)
• 19.2 Programming Method for Si NC to Improve Memory Window (Chinese Acad. of Sci.)
• 19.3 Dynamic Electrical Behavior of Si-NC Memory Gate Stacks (Inst. of Micro. NCSR)
• 19.4 Carrier Transport by FE Thermal Detrapping in SiNC thin film (Tokyo Inst. of Tech)
• 19.5 Programming Characteristics of Triple Layer Silicon NC Memory (Tsinghua U.)

20.0 Modeling of the Nanocrystal Device and Process

• 20.1 Programming Windows in NC Memory (U. di Padova & U. Auto de Barcelona).
• 20.2 Model of Memory Window for Metal NC Flash (Cornell, Nat.Chiao Tung,U.of Iowa)
• 20.3 Model to Calculate Tunnel Current in NC Cells(Air Force Res. Lab.& U.of Missouri)
• 20.4 Model for Electrical Behavior of NC Trigate Fin-FET Structures(CEA-LETI-Minatec)

21.0 Basic Research into Nanocrystal Memories

• 21.1 NC Floating Gate NVM with Co- Bionanodots in HfO2(Nara Inst. of Sci.&Tech)
• 21.2 Metal & Semcond. Mechanisms of a Floating Gate NVM NC (U. of Strasbourg)
• 21.3 Thin Film NVM with IGZO NC Trapping Layer (National Chiao Tung Univ.)
• 21.4 Quantum Dots/Wells Using NC Grown in Gd2O3 Using MBE (Leibniz U.)
• 21.5 Si/Ge NC in Epitaxial Gd2O3 NV Memory Using MBE(Leibniz U and U of Leuven)
• 21.6 Charge Characteristics of Colloidal NC Embedded in TiO2 Film (Chungnam Nat. U.)
• 21.7 Magnetic Nanodot Memories (North Carolina State University)
• 21.8 Iron Nanoparticle Memory in Hollow Carbon Nanotube
• 21.9 DNA Method to Create Lattices of Two Type Nanoparticles (Brookhaven Nat. Lab)

Bibliography

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