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A Memory Strategies Focus Report

Resistance RAMs , May 2010

(ReRAM, RRAM, Metal Oxide RAM, Memristor, PMC-RAM, CB-RAM)

This report covers resistance RAMs in various technologies along with cell and element structures, and cross-bar arrays made of these cells. These small cell, high density non-volatile memory devices are thought to be possible successors of the current non-volatile memory devices in the < 20 nm technologies. The memristor is discussed since resistance RAMs operate like a classical memristor.  Complex and binary metal oxide elements in RRAMs are discussed using many different materials. Memories of these materials are covered separately including cells, arrays and characterizations that have been performed. Cross-bar arrays using RRAM elements and various selection devices are discussed. The programmable metallization cell, which uses metal conducting filaments in an electrolyte, is included and several discussions covered. Various new materials which have been shown to exhibit resistance switching are included. The recent work of companies that are potential vendors of these various memory technologies are then summarized.

70+ pages.

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Table of Contents - Resistance RAMs, May 2010

1.0 Overview of Resistance RAMs

2.0 Applications For Resistance RAMs

3.0 Cell Sizes vs. Technology for Resistance RAMs

4.0 Metal Oxide Memory Elements

5.0 Technical Issues and Mechanisms of Various Material RRAMs

6.0 Characterization and Modeling of Metal oxide Memory Cells

7.0 Metal Sulfide RRAM Memories

8.0 Selection Elements in Metal Oxide ReRAMS

9.0 3-D Stacking of Cross-Point RRAM Devices

10.0 Characterization and Test of RRAM Arrays

11.0 Programmable Logic Using RRAM

12.0 Conductive Bridge/Programmable Metallization Cell Memories

13.0 Other Resistance Switching Materials

14.0 Developers and Vendors of Resistance RAMs

Bibliography

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