MEMORY STRATEGIES INTERNATIONAL Semiconductor Memory Services
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Memory Strategies International provides services to the semiconductor memory industry in the following areas:

• Technical Market Analysis
• Technical Seminars
• Private Technical and Business Consulting

Technical Seminars

Technology seminars on semiconductor memory topics targeted at engineers and engineering staff in companies manufacturing or using memories of any type.

Lecturer: Betty Prince, Ph.D.

• Author of: Emerging Memories: Technologies and Trends, 2002, Springer
• High Performance Memories, Revised Edition 1999, John Wiley & Sons
• Semiconductor Memories, 2nd Edition, 1992, John Wiley & Sons

Custom Seminars also available on:

Basics of Resistance RAMS
Overview: This three hour seminar covers the basics of Resistance RAMs. It begins with an overview of prospective applications suggested for Resistance RAMs. This is followed by a discussion of mechanisms and materials for various types of Metal Oxide ReRAMs including various issues of cross-bar memories. Different models that have been used to describe ReRAM operation are discussed. The technology of conductive bridge RAMs is then covered followed by a discussion of advanced materials for ReRAMs such as nanowires. Finally development issues such as reliability, characterization and operation are explored.

The cost of this seminar is $2500 which includes travel expenses in the continental U.S. to your location. It is offered for a maximum of 20 people. A pdf copy of our report "Resistance RAM Technology & Development, July 2011", on which the seminar is primarily based is included in the price (a $975 value). Seminar facilities including meeting room and computer projector must be provided by the company requesting the course. For seminars given outside the continental U.S., there is a $500 added charge to cover travel.

Basics of Magnetic RAM (MRAM)
Overview: This three hour seminar covers the basics of Magnetic RAM Memory. It begins with the basic physical operation and electrical properties of Field Programmable Magnetic RAMs. Applications for the MRAM are then considered both current and potential. Various reliability and test issues that have been investigated are explored. The operation, electrical properties and theory of Spin Torque Transfer MRAMs are then discussed and potential applications considered. Embedded MRAMs and MRAM in logic applications are discussed. Many of the models that have been developed to describe and design the Magnetic RAM are mentioned. The seminar material is based on published papers and articles from respected technical journals and conferences and does not represent any particular product or company.

The cost of this seminar is $2500 which includes travel expenses in the continental U.S. to your location. It is offered for a maximum of 20 people.
A pdf copy of our report on Magnetic RAM Memory, October 2011, on which the seminar is primarily based is included in the price (a $975 value).
Seminar facilities including meeting room and computer projector must be provided by the company requesting the course. For seminars given outside the continental U.S., there is a $500 added charge to cover travel.

Basics of Phase Change Memory (PCM, PC-RAM)
Overview: This three hour seminar covers the basics of Phase Change Memory(PCM). It begins with the basic physical operation and electrical properties of this interesting new Non-Volatile RAM and a comparison with existing conventional SRAM, DRAM and Flash memory.

Various reliability and test issues that have been investigated are explored and the results compared to the expectations for conventional memories. Potential applications where it might be competitive with existing memory are discussed including the potential of being integrated cost effectively in a system or logic technology to replace multiple other memory types. Scaling and density issues are mentioned including the interesting possibility of being used in a high density 3D cross-point array. Many of the models that have been developed to describe and design the PCM are mentioned. The seminar material is based on published papers and articles from respected technical journals and conferences and does not represent any particular product or company.

The cost of this seminar is $2500 which includes travel expenses in the continental U.S. to your location. It is offered for a maximum of 20 people.
A pdf copy of our report on Phase Change Memory Trends, on which the seminar is primarily based is included in the price (a $975 value).
Seminar facilities including meeting room and computer projector must be provided by the company requesting the course. For seminars given outside the continental U.S., there is a $500 added charge to cover travel.

Basics of DRAMs embedded in Logic (eDRAM)
Overview: This three hour seminar covers the basics of eDRAMs (DRAMs embedded in logic). It begins with an overview of various applications for embedded DRAMs.  This is followed by an overview of the technology and issues of the 1T1C eDRAM cell both stacked and trench. Floating body eDRAM is then covered in both the MOS and BJT variations.  Thyristor-like 1T eDRAMs are discussed.  The evolution and issues of multitransistor logic eDRAM follows along with a section on stacked 3D TSV eDRAM.   Architecture and circuits for eDRAMs and test and modeling sections complete the seminar.  Foundries that offer eDRAM are discussed along with IDM's offering eDRAM.  

The cost of this seminar is $2500 which includes travel expenses in the continental U.S. to your location. It is offered for a maximum of 20 people.
A pdf copy of our report on eDRAM, on which the seminar is primarily based is included in the price (a $975 value). Seminar facilities including meeting room and computer projector must be provided by the company requesting the course. For seminars given outside the continental U.S., there is a $500 added charge to cover travel.

 Basics of Low Power Ferroelectric Memory
Overview: This three hour seminar covers the basics of low power Ferroelectric Memory.  It begins with the basic Ferroelectric Memory phenomena. This is followed by applications for FeRAM, FeFET, FeNAND and plastic FeMemory. The 1T1C and 2T2C FeRAM is then discussed including: technology, production foundries, cell and circuit architecture, reliability, and modeling. The various MCU in production using embedded FeRAM are considered along with standalone FeRAM in production. The issues and cell architecture of the single ferroelectric transistor (FeFET) development is discussed followed by a section one FeNAND development. The last section covers the development for the printed ferroelectric polymer non-volatile memory including the plastic FeMemory in plastic CMOS intended for high volume roll-to-roll manufacturing.

The cost of this seminar is $2500 which includes travel expenses in the continental U.S. to your location. It is offered for a maximum of 20 people.
A pdf copy of our report "Trends in Low Power Ferroelectric Memory", on which the seminar is primarily based, is included in the price (a $975 value). Seminar facilities including meeting room and computer projector must be provided by the company requesting the course. For seminars given outside the continental U.S., there is a $500 added charge to cover travel.

Basics of Nanocrystal Flash Memories
Overview:  This three hour seminar covers the basics of Nanocrystal Flash Memories.  It begins with Nanocrystal (NC) Memory operation and fabrication.  The potential use of NC to enhance other memories is discussed including: NAND Flash, ReRAM, and Charge Trapping Flash and vertical GAA memory,  NC can be used in plastic/polymer memory for very low cost circuits.  Multiple layer and multi-gate NC memories are discussed. Other materials than silicon investigated for NC are discussed such as Ge, Ru, Pt, Au and various metal oxides and silicides. NC self-assembly is discussed along with reliability, test and characterization. 

The cost of this seminar is $2500 which includes travel expenses in the continental U.S. to your location. It is offered for a maximum of 20 people.
A pdf copy of our report "Nanocrystal Flash Memory Technology & Development, June 2011", on which the seminar is primarily based, is included in the price (a $975 value). Seminar facilities including meeting room and computer projector must be provided by the company requesting the course. For seminars given outside the continental U.S., there is a $500 added charge to cover travel.

If you are interested in any of our seminars, please Contact Memory Strategies

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Memory Strategies International, 16900 Stockton Drive, Leander, TX, USA, 78641;   512.260.8226 (phone), 512.900.2846 (fax). Send questions or comments about this website to webmaster@memorystrategies.com. Copyright © 2012 Memory Strategies International. All rights reserved. Legal stuff. Last Modified: March, 2012.