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MEMORY STRATEGIES INTERNATIONAL Semiconductor Memory Services |
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Memory Strategies International provides services to the semiconductor memory industry in the following areas:
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Technology seminars on semiconductor memory topics targeted at engineers and engineering staff in companies manufacturing or using memories of any type.
| Basics of: | Resistance RAMs | Magnetic RAM (MRAM) |
Phase Change Memory (PCM, PC-RAM) |
DRAMs embedded in logic |
Lecturer: Betty Prince, Ph.D.
Custom Seminars also available on:
| Basic Course Semiconductor Memories | Fast DRAM & SRAM | Overview of Emerging Memories | Modern & Emerging Memories |
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Embedded Memories |
Application Specific Memory |
Future of Standalone Flash Memory |
Future of Embedded Flash Memory |
Basics of Resistance RAMS
Overview: This three hour seminar covers the basics of Resistance
RAMs. It begins with an overview of prospective applications suggested for
Resistance RAMs. This is followed by a discussion of mechanisms and
materials for various types of Metal Oxide ReRAMs including various issues
of cross-bar memories. Different models that have been used to describe
ReRAM operation are discussed. The technology of conductive bridge RAMs is
then covered followed by a discussion of advanced materials for ReRAMs
such as nanowires. Finally development issues such as reliability,
characterization and operation are explored.
The cost of this seminar is $2500 which includes travel expenses in the continental U.S. to your location. It is offered for a maximum of 20 people. A pdf copy of our report "Resistance RAM Technology & Development, July 2011", on which the seminar is primarily based is included in the price (a $975 value). Seminar facilities including meeting room and computer projector must be provided by the company requesting the course.
Basics of Magnetic RAM (MRAM)
Overview: This three hour
seminar covers the basics of Magnetic RAM Memory. It begins with the basic
physical operation and electrical properties of Field Programmable Magnetic
RAMs. Applications for the MRAM are then considered both current and
potential. Various reliability and test issues that have been investigated
are explored. The operation, electrical properties and theory of Spin Torque
Transfer MRAMs are then discussed and potential applications considered.
Embedded MRAMs and MRAM in logic applications are discussed. Many of the
models that have been developed to describe and design the Magnetic RAM are
mentioned. The seminar material is based on published papers and articles
from respected technical journals and conferences and does not represent any
particular product or company.
The cost of this seminar is $2500 which
includes travel expenses in the continental U.S. to your location. It is
offered for a maximum of 20 people.
A pdf copy of our report on Magnetic RAM Memory, October 2011, on which the
seminar is primarily based is included in the price (a $975 value).
Seminar facilities including meeting room and computer projector must be
provided by the company requesting the course.
Basics of Phase Change
Memory (PCM, PC-RAM)
Overview: This three hour seminar covers the basics of Phase Change
Memory(PCM). It begins with the basic physical operation and electrical
properties of this interesting new Non-Volatile RAM and a comparison with
existing conventional SRAM, DRAM and Flash memory.
Various reliability and test issues that have been investigated are explored and the results compared to the expectations for conventional memories. Potential applications where it might be competitive with existing memory are discussed including the potential of being integrated cost effectively in a system or logic technology to replace multiple other memory types. Scaling and density issues are mentioned including the interesting possibility of being used in a high density 3D cross-point array. Many of the models that have been developed to describe and design the PCM are mentioned. The seminar material is based on published papers and articles from respected technical journals and conferences and does not represent any particular product or company.
The cost of this seminar is $2500 which includes travel expenses in the
continental U.S. to your location. It is offered for a maximum of 20 people.
A pdf copy of our report on Phase Change Memory Trends, on which the
seminar is primarily based is included in the price (a $975 value).
Seminar facilities including meeting room and computer projector must be
provided by the company requesting the course.
Basics of DRAMs embedded in Logic (eDRAM)
Overview: This three hour seminar covers the basics of eDRAMs (DRAMs
embedded in logic). It begins with an overview of various applications for
embedded DRAMs. This is followed by an overview of the technology and issues of
the 1T1C eDRAM cell both stacked and trench. Floating body eDRAM is then covered
in both the MOS and BJT variations. Thyristor-like 1T eDRAMs are discussed.
The evolution and issues of multitransistor logic eDRAM follows along with a
section on stacked 3D TSV eDRAM. Architecture and circuits for eDRAMs and test
and modeling sections complete the seminar. Foundries that offer eDRAM are
discussed along with IDM's offering eDRAM.
The cost of this seminar is $2500 which includes travel expenses in the
continental U.S. to your location. It is offered for a maximum of 20 people.
A pdf copy of our report on eDRAM, on which the
seminar is primarily based is included in the price (a $975 value).
Seminar facilities including meeting room and computer projector must be
provided by the company requesting the course.
If you are interested in any of our seminars, please Contact Memory Strategies
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Memory Strategies International, 16900 Stockton Drive, Leander, TX, USA, 78641; 512.260.8226 (phone), 512.900.2846 (fax). Send questions or comments about this website to webmaster@memorystrategies.com. Copyright © 2010 Memory Strategies International. All rights reserved. Legal stuff. Last Modified: February, 2011.