Non-Volatile Memories Embedded in Logic 2009 - Applications, Technology, Products, Vendors

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Non-Volatile Memories Embedded in Logic: Applications, Technology, Products and Vendors, Sept. 2009
(eFloating Gate Flash, eReRAM, eSONOS, eNanocrystal, eMRAM, eFeRAM, ePC-RAM, eCB-RAM, eMetal Oxide Memory, eMEM, Other)

During the recent downturn, introductions and development in embedded non-volatile memory has flourished. Innovation in floating gate flash memory continues with a 50 nm vertical channel double gate multi-bit NOR Flash and a dual channel EEPROM technology being discussed. Production chips in SONOS/MONOS technology are appearing and development ranges from salicided 130 nm technology to double gate fin technology. Several unified memories combining SONOS flash and floating body DRAM are discussed. Nanocrystal embedded memories appear close to production and development includes: metal NC, multiple layers of NC and self-assembled arrays. In Resistance RAMs, conductive bridge RAM technology seems popular for embedded non-volatile with geometries down to 22 nm. Several metal oxide ReRAMs have also been described in vertical cross-point arrays. Embedded field programmed MRAMs include an ALU with eMRAM in 150 nm technology, 3D stacking of MRAM based L2 caches on processors, a ternary CAM using MRAM and a primitive MRAM cell for SoC libraries. Embedded spin torque transfer MRAM is projected to be in introduced in 2010 in 90 nm technology and in 2012 in 65 nm technology. eFeRAM is in production and the number of foundries available is expanding.

170+ pages.

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Table of Contents

1.0 Overview and Executive Summary

2.0 Embedded Non-Volatile Memory Market

2.1 Overview
2.2 Microcontroller Market
- 2.2.1 Microcontroller Market Forecasts
- 2.2.2 Microcontroller Suppliers

3.0 Flash MCU and SoC Characteristics and Memory Density and Application

4.0 Current Applications for Embedded Flash

4.1 Automotive Applications and Market
- 4.1.1 Automotive Market
- 4.1.2 Overview of Requirements for Automotive Applications
- 4.1.3 Examples of Flash MCU for Automotive Applications
- 4.1.4 Automotive Central Body and Chassis Control
- 4.1.5 Chassis and Safety Automotive Applications
- 4.1.6 Automotive Small Motor Control
- 4.1.7 CAN and LIN Devices:
- 4.1.8 Automotive Communications Systems
- 4.1.9 Automotive Navigation Systems
- 4.1.10 Automotive Power Train Systems
- 4.1.11 Automotive Engine Control
- 4.1.12 Driver Assist Systems
- 4.1.13 Instrument Clusters
- 4.1.14 Automotive Entertainment Systems
4.2 Household Appliances
- 4.2.1 Overview of the Household Appliance Market
- 4.2.2 Small Household Appliances
- 4.2.3 Large Household Appliances
4.3 Motor Control
4.4 Industrial Systems
- 4.4.1 Factory Automation Ethernet Networks
- 4.4.2 Real-Time Industrial Control Systems
- 4.4.3 Extended Temperature Industrial Systems
- 4.4.4 Wireless Control Applications
- 4.4.5 Lighting Control Systems
- 4.4.6 Tethered Industrial Applications
- 4.4.7 Industrial Drive Applications
- 4.4.8 Networked Industrial Systems
4.5 ZigBee Enabled Systems
4.6 Consumer Home Systems
- 4.6.1 Audio Home Products
- 4.6.2 Digital TV Control Circuits for Multiple Systems
- 4.6.3 Digital TV High Definition Interface Display Data
4.7 Medical Equipment
- 4.7.1 Medical Equipment Market
- 4.7.2 Portable Medical Systems
4.8 Portable Consumer Systems
- 4.8.1 Mobile Handsets
- 4.8.2 LCD Controllers With Embedded Flash for Portable Battery Operated Devices
4.9 USB Controller Chips
4.10 Blue Tooth Applications
4.11 Smart Card Controllers
- 4.11.1 Overview of Smart Card Market
- 4.11.2 Smart Card Controllers in Electronic ID Cards
- 4.11.3 Smart Cards (SIMS) in Advanced Applications
4.12 RFID Chips
4.13 Office Equipment
- 4.13.1 High End Office Equipment
- 4.13.2 VoIP Telephones

5.0 Embedded Floating Gate Flash Memory Technology, Test and Reliability

5.1 Reliability of Embedded Floating Gate Flash Memory
- 5.1.1 Effect of Peripheral Circuits of Vth Distributions in an EEPROM
5.2 Flash EEPROM Technology
- 5.2.1 Dual Channel EEPROM for Automotive (Renesas)
- 5.2.2 Sub 50 nm Vertical Channel Double GAte Multi-Bit NOR Flash (Intel)
5.3 90 nm Embedded Flash in Cu and Low-K Process
5.4 Memory Tester for Flash Memory (Advantest)

6.0 Embedded Trapping Site Storage Memory Technology, Test and Reliability

6.1 Trapping Site Memory Technology
6.1.1 Dopant Segregated Schottky Barrier SONOS NOR Flash (KAIST, EECS, ETRI)
6.1.2 SoC Using SOONO Technology for FET, DRAM and Flash (Samsung)
6.1.3 Punch-Through Immune Virtual Ground Trapping Storage Cell (Macronix).
6.1.4 Unified SONOS Flash & 1T-DRAM Using FinFET Technology (Kaist, EECS, ETRI)
6.1.5 NXP SONOS low Power Embedded Flash Using High -k and Metal Gate
6.1.6 NROM NOR Using Back Bias HHI and Forward Bias Assisted CHEI (Promos)
6.2 Nanocrystal Storage for Embedded Flash Technology
6.2.1 Overview of Nanocrystal Embedded Flash Technology
6.2.2 Cylindrical Bit Cell for 90 nm 4-Mb Si-NC NOR Flash Memory (Numonyx)
6.2.3 128-KB Split-Gate NOR Flash using Silicon Nanocrystal Storage Medium(Freescale)
6.2.4 Co3O4 Nanodot Self-Assembled Protein Template Technology
6.2.5 Self Assembling Platinum Nanodots for Embedding in Memory Structures (Atmel)

7.0 Embedded Phase Change Technology, Test and Reliability

7.1 Overview of Phase-Change RAM (PC-RAM) Technology
7.2 Phase Change Memory Technology, Test and Reliability
- 7.2.1 Program Circuit for a 90 nm 4-Mb Embedded PCM (STMicroelectronics)
- 7.2.2 Embedded Phase Change Memory Technology for 45 nm Generation
- 7.2.3 Thompson Effect in Phase Change Memory

8.0 Conductive Bridge Resistance RAMs

8.1 Overview of Conductive Bridge Memory
8.2 Cu Ion Conductive Bridge Electrolyte RRAM (Sony)
8.3 Conductive Bridge Memory in 90 nm Technology (Qimonda, Infineon and Altis)

9.0 Embedded Resistance RAM Technology

9.1 NiO Resistance Change Memory with 3-D Integration (Stanford University)
9.2 1-Kbit HfO2 Based 1T1R RRAM With Multi-Level Operation(ITRI, Nat.Tsing Hua U.)
9.3 RRAM Using HfO2 in 180 nm CMOS (ITRI, MingShin U., Tsing Hua U.)
9.4 Using RRAM to Build 3-D FPGA (Chinese Academy of Science)
9.5 Integration of NiO Memory Structures in Interconnect Structures (U. of Sud Toulon)
9.6 ReRAM Made with NiO Doped with Ti:NiO (Fujitsu)
9.7 Stacked Cross-Point Diode Ti Doped NiO RRAM Array (Samsung)
9.8 ReRAM Made with NiO Doped with Ti:NiO (Fujitsu)
9.9 RRAM using Fe-O for Fast Redox Reaction Switching (Matsushita)

10.0 Embedded Fuse Memories

10.1 Embedded Fuse Memory in 32 nm CMOS Technology (TSMC)
10.2 Intel 1T1R Fuse

11.0 Embedded Field Program MRAM

11.1 Portable Multimedia Applications
11.2 Industrial Touch-Screen Application
11.3 3D Reconfigurable Logic Block Using SPRAM
11.4 3D Stacking of MRAMs on Chip Multiprocessors
11.5 32-Mb MRAM Macro for Embedding in SoC.
11.6 Ternary CAM Using 6T and 2 MRAM Storage
11.7 Magnetic Primitive Cell for SoC Libraries Using MRAM/CMOS Process (NEC)
11.8 NEC Dual Port 5T2MTJ Cell in SoC MRAM Technology
11.9 32-Mb Field Program MRAM for Embedding in SoC (NEC)
11.10 180 k-bit Field Program MRAM Macro (Everspin, Freescale)
11.11 Embedded Field Programmed MRAM in Conventional CMOS
11.12 Embedded Field Program Toggle-Mode MRAM Technology (Freescale)

12.0 Embedded Spin Torque Transfer MRAM

12.1 Spin Transfer MRAM Overview
12.2 3-D Reconfigurable logic Block Cell for STT RAM (Hitachi & Tohoku U.)
12.3 MTJ MRAM With Current Induced Switching in Reconfigurable Logic (Tohoku U.)
12.4 Spin Torque Transfer MRAM for Embedding in MCU (Renesas)
12.5 Vertical Spin Injection Technology MRAM (Toshiba)
12.6 Vertical Spin Injection Technology GMR MRAM (AIST)
12.7 Combined Perpendicular Magnetic Technology and Spin Transfer Switching(Toshiba)
12.8 Spin Injection MRAMs with Enhanced Thermal Stability (Hitachi)

13.0 Embedded FeRAM

13.1 Embedded FeRAM Applications
13.2 FeRAM Technology
- 13.2.1 180 nm FeRAM Technology (Samsung)
- 13.2.2 130 nm FeRAM Technology (TI)
- 13.2.3 Embedded FeRAM Technology for Rugged Environments (Celis)

14. Novel Non-Volatile Embedded Memories in Research and Development

14.1 Electro-Mechanical Hysteretic Non-Volatile Memory

15.0 Companies Supplying or Developing Products with Embedded Non-Volatile Memory

15.1 Analog Devices
15.2 Atmel
- 15.2.1 Atmel Embedded Floating Gate Flash Product
- 15.2.3 Atmel Silicon NanoCrystal Embedded Memory Development
15.3 Cypress Semiconductor
- 15.3.1 Cypress Embedded Flash Product Announcements
- 15.3.2 Cypress SONOS Embedded Flash Technology
15.4 EM Microelectronics
- 15.4.1 EM Microelectronics Embedded Flash Memory Technology
- 15.4.2 EM Microelectronics Embedded Flash Memory Products
15.5 Epson
15.6 Freescale/Everspin
- 15.6.1 Freescale Embedded Floating Gate Flash Technology
- 15.6.2 Freescale Embedded Floating Gate Flash MCU Product Announcements
- 15.6.3 Freescale Silicon Nanocrystal Embedded NV Memory
- 15.6.4 Freescale MRAM Embedded NV Memory (EverSpin)
15.7 Fujitsu
- 15.7.1 Fujitsu Floating Gate Flash Technology Development
- 15.7.2 Fujitsu Embedded Floating Gate Flash Product Announcements
- 15.7.3 Fujitsu Embedded FRAM
- 15.7.4 Fujitsu ReRAM Made with NiO Doped with Ti:NiO
15.8 Hitachi
- 15.8.1 Hitachi and Tohoku University
15.9 Infineon
- 15.9.1 Infineon Embedded Floating Gate Flash MCU Introductions
15.10 Intel
- 15.10.1 Intel 1T1R Fuse
- 15.10.2 Intel Vertical Channel Double Gate Multi-bit NOR Flash Cell
15.11. Macronix NROM Memory
15.12 Matsushita
- 15.12.1 Matsushita Embedded Flash Memory Product
- 15.12.2 Matsushita Nanodot Technology
15.13 MicroChip
- 15.13.1 Microchip Embedded Non-Volatile Memory Technology
- 15.13.2 Microchip Embedded Flash Product
15.14 NEC Electronics
- 15.14.1 NEC Embedded Flash Technology
- 15.14.2 NEC Flash Microcontroller announcements
- 15.14.3 NEC MRAM Technology
- 15.14.3.1 32-Mb MRAM Macro for Embedding in SoC.
- 15.14.3.2 Magnetic Primitive Cell for SoC Libraries Using MRAM/CMOS Process (NEC)
- 15.14.3.3 NEC Dual Port 5T2MTJ Cell in SoC MRAM Technology
- 15.14.3.4 32-Mb Field Program MRAM for Embedding in SoC (NEC)
- 15.14.3.5 Embedded Field Programmed MRAM in Conventional CMOS
15.15 Numonyx (Intel, STM and Francisco Partners)
- 15.15.1 Numonyx PCM Technology
- 15.15.2 Numonyx Silicon Nanocrystal Memories
15.16 Oki / Rohm
- 15.16.1 Oki Embedded Flash Technology
- 15.16.2 Oki Embedded Flash Product
- 15.16.3 Rohm IC with Embedded FeRAM Register
15.17 NXP (Philips)
- 15.17.1 NXP/Philips Embedded Floating Gate Flash Technology
- 15.17.2 NXP/Philips Floating Gate Embedded Flash Product
- 15.17..3 NXP Embedded Phase Change Memory
- 15.17.4 NXP Embedded Flash SONOS Technology
15.18 Oki Flash Memory
15.19 Ramtron FeRAM Product and Technology
- 15.19.1 Ramtron FeRAM Technology
- 15.19.2 Ramtron FeRAM Product
15.20 Renesas/Hitachi
- 15.20.1 Renesas Technology
- 15.20.2 Renesas Flash ROM and EEPROM Product
- 15.20.3 Renesas Embedded MONOS Technology
- 15.20.4 Renesas MONOS Product Announcements
- 15.20.5 Renesas Dual Channel EEPROM in 130 nm Technology
- 15.20.6 Renesas fast EEPROM in 90 nm Technology
- 15.20.7 Renesas/Grandis/Hitachi Embedded MRAM Memory
15.21 Samsung Semiconductor
- 15.21.1 Samsung Floating Gate Embedded Flash Technology
- 15.21.2 Samsung Embedded Non-Volatile Product
- 15.21.3 Samsung Embedded Flash in SoC Using SOONO Technology
15.22 Sanyo Semiconductor
15.23 Seiko-Epson
- 15.23.2 Seiko Epson Flash MCU Products
15.24 Silicon Laboratories
15.25 Sony
- 15.25.1 Cu Ion Conductive Bridge Electrolyte RRAM (Sony)
15.26 Spansion Differentiated MirrorBit Flash
15.27 SST SuperFlash
- 15.27.1 SST Embedded Flash MCU Products
- 15.27.2 SST SuperFlash Memory Technology
15.28 STMicroelectronics
- 15.28.1 STM Floating Gate Flash MCU Product
- 15.28.2 STM Embedded Flash Technology
- 15.28.3 Program Circuit for a 90 nm 4-Mb Embedded PCM (STMicroelectronics)
15.29 Texas Instruments
- 15.29.1 TI Embedded Flash Technology
- 15.29.2 TI Embedded Flash Product
- 15.29.3 TI Embedded FeRAM Technology
15.30 Toshiba
- 15.30.1 Toshiba Embedded NV Memory Technology Development
- 15.30.1.1 Toshiba NanoFlash Technology
- 15.30.2 Toshiba Floating Gate Flash Product
- 15.30.3 Toshiba Vertical Spin Injection MRAM Technology
15.31 Zilog Floating Gate Flash MCU's

16.0 Embedded Flash Memory Foundries

16.1 Austria Microsystems Foundry (Austria)
16.2 Chartered Semiconductor (Singapore)
16.3 Dongbu HiTek (Korea)
16.4 Grace Semiconductor Manufacturing Corporation(China)
16.5 Hua Hong NEC (China)
16.7 SMIC (China)
16.8 Tower Semiconductor (Israel)
16.9 TSMC (Taiwan)
- 16.9.1 TSMC CPU Technology Plans
- 16.9.2 TSMC Embedded Non-Volatile Technology Plans
- 16.9.3 NV Memory Technology TSMC is Running for Customers
- 16.9.4 32-Kbit Electrical eFuse in 32 nm TSMC Technology
16.10 UMC
- 16.10.1 UMC Embedded Flash
- 16.10.2 UMC MRAM
- 16.10.3 UMC and Elpida PCRAM Technology Development
- 16.10.4 X-Fab

17.0. Companies Supplying/Developing Embedded Non-Volatile Memory IP and Services

17.1 Axon Technology
17.3 Celis Semiconductor
17.4 Cypress
17.5 eMemory
17.6 Grandis
17.7 Impinj
17.8 Kilopass
17.9 MoSys
17.10 Saifun Semiconductor
17.11 Sidense Corporation
17.12 Simtek
17.13 SST SuperFlash
17.13.1 SST Embedded Flash Technology
17.14 Virage Logic

Bibliography

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