Non-Volatile Memories Embedded in Logic - Applications, Technology, Products, Vendors

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Non-Volatile Memories Embedded in Logic: Applications, Technology, Products and Vendors, Dec. 2011
(eFloating Gate Flash, eSONOS, eNanocrystal, eFuse, eFP-MRAM, eSTT-MRAM, eFeRAM, ePC-RAM, eCB-RAM, eReRAM)

The microcontroller market in 2011 appears to have recovered to more than 2007 levels after a lengthy downturn through 2009 and 2010 and continued growth is currently being forecast. Flash MCU technology ranges from 130 nm for 8-bit and 16-bit MCU to 90 nm for 32-bit MCU at various vendors. leading edge development is in the 65 nm technology range. The capacity of embedded flash ranges up to 4-MBytes. Most companies are still using embedded floating gate flash, although several of the emerging embedded memory technologies have made it into production in an applicable niche. Freescale is in production with its thin film nanocrystal memory, Fujitsu makes FeRAM based MCU, Numonyx and Samsung have produced IC's with phase change memory. Renesas is in production with a charge trapping MONOS memory and Everspin is shipping field-programmable MRAM.

Important applications areas include: automotive assist and safety, industrial and home networking, The top 10 automotive flash microcontroller suppliers in 2010 were: Renesas, Freescale, Infineon, TI, Fujitsu, STMicroelectronics, Microchip, Atmel, Samsung, and NXP. Important automotive areas in 2011 included: functional safety, advanced driver assistance systems, driver assistance for small cars and electric and hybrid car control . Energy efficient household appliances claimed much attention as did battery operated household tools. Networked systems included: home and industrial networks many with ZigBee RF interfaces replacing IR. FeRAMs from Ramtron have found their way into smart RFID tags. Chips for digital utility meters are being supplied by several vendors to include communications interfaces and tamper detection. The market for portable home medical equipment is growing due to the baby boom generation reaching retirement age. Freescale is sampling their MCU with embedded nanocrystal flash memory into this application.

Several companies have reported development work on floating gate flash. A 90 nm single polysilicon NVM was described which embeds in standard CMOS without mask or process adder. A scalable 65 nm embedded split gate flash was developed to embed in CMOS logic used multiple floating gate dielectrics side-by-side erase and floating gate.A new erase gate disturb mechanism was described for a split gate flash. A study related of oxide thickness variation for FG embedded flash to data retention and reliability. A study of hot carrier injection on 65 nm embedded floating gate flash devices was modeled. A 2T cell with shared floating gate was used as a configurable switch in an FPGA module.

A 20nm split gate charge trap memory was described using silicon nanocrystals or silicon nitride. A single polysilicon SONOS flash memory technology was described for embedding in SoC applications. A dynamic programming algorithm improved reliability. A MONOS flash memory was integrated with a processor core in a production MCU.

Development continues for embedded non-volatile memory in each of the emerging memory areas including: nanocrystal storage with a 90 nm split gate memory being discussed at a foundry, continued development on embedded phase change memory with several 1-Gb PCM being discussed., a 130 nm embedded conductive bridge RAM was studied for its write energy reduction to less than 5 pj. Embedded resistance RAM technology had many studies done including fab compatible unipolar switching and several high density stacked cross-point arrays . Work continues on the field programmable MRAM even as it moves into production in SRAM replacement markets and a thermal assisted MRAM moves into production. Significant effort continues on the STT MRAM including much recent effort on perpendicular anisotropy MRAM and three terminal domain wall devices. Low voltage FeRAMs continue in development for low power embedded applications.

200+ pages.

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Table of Contents

1.0 Overview of Embedded Non-Volatile Memories

2.0 Embedded Non-Volatile Memory Market Overview

2.1 Flash Microcontroller Market Overview

3.0 Flash MCU Production Technology Overview

4.0 Applications for Flash Microcontrollers

4.1 Automotive Applications
- 4.1.1 Overview of the Automotive Market
- 4.1.2 Advanced Driver Assistance Systems (ADAS)
- 4.1.3 Automotive Power Train Systems
- 4.1.4 Electric and Hybrid Vehicle Motor Control
- 4.1.5 Automotive Central Body and Chassis Systems
- 4.1.6 Airbag Control
- 4.1.7 Automotive Small Motor Control
- 4.1.8 Automotive Dashboard Systems
- 4.1.9 Automotive Audio Infotainment Systems
- 4.1.10 Automotive "Under-The-Hood" Applications
4.2 Household Appliances
- 4.2.1 Overview of the Household Appliance Market
- 4.2.2 Household Appliance Networks and Controllers
- 4.2.3 Small Household Appliances
- 4.2.4 Large Household Appliances
4.3 Motor Control
4.4 Industrial Systems
- 4.4.1 Overview of Industrial Systems Market
- 4.4.2 Climate Change Monitor Buoy
- 4.4.3 Industrial Battery Driven Systems
- 4.4.4 Industrial Asset Tracking Systems
- 4.4.5. Mobile Robotic Systems
- 4.4.6 MCU Based Algorithm for Efficient DC Solar Power Extraction
- 4.4.7 USB Device for Remote Field Upgrades and Downloads
4.5 Networked Systems
- 4.5.1 Overview of Networked Systems
- 4.5.2 Communications Processors
- 4.5.3 Home Network Systems
- 4.5.4 Networked Industrial Systems
- 4.5.5 ZigBee RF Enabled Systems
- 4.5.6 Smart RFID Tags
4.6 Smart Electrical Grid and Digital Utility Smart Meters
- 4.6.1 Smart Meter Market Overview:
- 4.6.2 Smart Meter Chip Announcements
4.7 Consumer Home Systems
- 4.7.1 Television Based Systems and Set Top Boxes
- 4.7.2 Audio Signal Processing System
- 4.7.3 Multimedia Systems
- 4.7.4 Cache in Graphics Processing Units
- 4.7.5 LCD Graphics Controller
4.8 Low Power Mobile Applications
4.9 Medical Equipment
- 4.9.1 Portable Medical Systems
4.10 Air, Space and Military Applications
- 4.10.1 Airborne Equipment
- 4.10.2 SRAM Replacement in Space Systems
- 4.10.3 L1 Cache in Processors in Radiation Hardened Systems
4.11 Portable Data Storage Devices
- 4.11.1 USB Controller Chips
- 4.11.2 Smart Card Controllers in Electronic ID Cards with Encryption Processors
- 4.11.3 Smart Cards (SIMS) in Advanced Applications
- 4.11.4 Flash Resident File System for Embedded Sensor Networks (U.of British Columbia)
- 4.11.5 Security Encryption Processor with EEPROM (Atmel)
- 4.11.6 SoC for UHF Mobile RFID Reader in 180 nm eFlash CMOS (PHYCHIPS)
4.12 Office Equipment
- 4.12.1 Servers and Database Systems
- 4.12.2 Desktop Computers
- 4.12.2.1 Scalable Processor with Circular Link Interface Configured Using eEPROM
4.13 Non-Volatile RAM Applications
- 4.13.1 NV-SRAM Replacement
- 4.13.2 Embedded NOR Flash in Logic Replacement

5.0 Embedded Floating Gate Flash Technology Development

5.1 Overview of Embedded Floating Gate Flash Technology Development
5.2 Single Poly eFlash in Standard CMOS with no Mask or Process adders (Genusion)
5.3 Reliable High Density Embedded NVM (Genusion)
5.4 Endurance in Embedded Non-Volatile Memory Technology(IBM, STMicro, Labs)
5.5 A 65 nm Embedded Split-Gate FG Flash Memory Technology (TSMC)
5.6 Erase Gate Disturb Mechanism During Programming of a Split-Gate eFlash (TSMC)
5.7 Oxide Thickness Variation Test for FG Embedded Flash (Atmel, U. of Montpellier)
5.8 SPICE model for Embedded Flash Technology (Univ. of Montpellier)
5.9 Hot Carrier Injection Effect on Embedded Flash Devices ( STM, IBM, European Labs)
5.10 A 65 nm 2T Floating Gate Flash Cell with Shared Floating Gate (Actel, U. of Calif.)
5.11 Data Flash Dual Channel EEPROM Technology (Renesas)

6.0 Embedded Charge Trapping Product, Technology and Development

6.1 Overview of Embedded Charge Trapping Development
6.2 Scalability to 20 nm of Split-gate Charge Trap Memories (CEA, STMicro, CNRS)
6.3 Single Poly SONOS Embedded Flash Memory (eMemory)
6.4 Dynamic Programming Reliability Improvement of SONOS PMOS eFlash (eMemory)
6.5 Products and Roadmap for MONOS/SONOS Embedded Flash (Renesas)
6.6 Charge Storage of HfON with Al2O3 Blocking Oxide (Nat. Tsing, Hua University)
6.7 Lateral Charge Distribution in 40 nm Split-Gate SONOS (Renesas/NEC)
6.8 Dopant Segregated Schottky Barrier SONOS NOR Flash (KAIST, EECS, ETRI)
6.9 SoC Using SOONO Technology for FET, DRAM and Flash (Samsung)
6.10 MLC, Mb SG SONOS Using Dynamic Threshold Program (UMC, SSS, NCTU,FCU)

7.0 Nanocrystal Storage for Embedded Floating Gate Flash Production and Technology

7.1 Nanocrystal Embedded Flash Technology
- 7.1.1 Nanocrystal Split Gate Flash for Fast, Low Power MCU (Freescale, Global Foundries)
- 7.1.2 Nanocrystal Location in Nanowire GAA SONOS Memories (National Chiao Tung U.)
- 7.1.3 Vertical Si Nanowire GAA Memory Using Si NC (A*STAR, Nanyang U,U of Bologna)
- 7.1.4 TiSi2 NC MOS FET Memory (University of Calif. Riverside)
- 7.1.5 Thin Film Storage Flash Memory Using NC (Freescale)
- 7.1.6 SONOS NV Memory in 10 nm Node using Si Nanocrystals (Toshiba)
- 7.1.7 Formation Process for Memory Using ALD Deposited Ru NC (Seoul Nat. Univ.)
- 7.1.8 Floating Gate Memories using Ruthenium Nanocrystals (U. of Texas, Austin)
- 7.1.9 Low Temperature Pentacene Organic Au NanoParticle Memory Device (Kookmin U.)
- 7.1.10 Pt Induced PtSi NC Process for Use in Nonvolatile Memory (U. of Calif., Riverside)
- 7.1.11 Charge Storage of <2 nm Pt NC in Al2O3 layers (U. Missouri, N. Carolina State U.)
- 7.1.12 Self-Assemb. Metal NC Memory with 15VWindow(U.Calif.,U.Wisconsin,U.Queensland)
- 7.1.13 Electrical Properties of InAs NC in SiO2 Memories (Inst. of Nanotech Lyon)
- 7.1.14 Charge Characteristics of Colloidal NC Embedded in TiO2 Film(Chungnam Nat.U.)
- 7.1.15 Floating Gate Memory Using Co NC with SiO2 Shells for Storage(U.of Texas,Austin)
- 7.1.16 Programming Windows in NC Memory (U. di Padova & U. Auto de Barcelona).
- 7.1.17 Method for Forming a Regular Array of SN in a Si3N4 Layer (U. de Sherbrooke)
- 7.1.18 Mapping Method for Nanocrystal Self Assembly (U. of Michigan)
- 7.1.19 Memory Devices with Single Layer Gold and Platinum NC (Indian Inst. of Tech.)
- 7.1.20 Lanthanide Graded CT Stack with Ge Nanocrystals (Nanyang Tech. Univ.)
- 7.1.21 CdSe NC by Self-Assembled Di-Block Copolymer(MyongjuU, Seoul NU, YonseiU)
- 7.1.22 Dynamic Behavior of Si-NC Memory Gate Stacks (Inst. of Microelec. NCSR)
- 7.1.23 Memory Characteristics of HfO NC in Al₂O₃ film memory stacks(Chang Gung U.)
- 7.1.24 IrOx Metal Nancrystal Memories in High-K Al2O3 films
- 7.1.25 TiN NC as Charge Trapping Layer in MONOS Memory (Nat. Tsing Hua U.)
- 7.1.26 CoSi2-Coated Si Nanocrystal Memory Characteristics ( U of Calif., Riverside)
- 7.1.27 Flash Memory using MPTMS Coated CVD deposited Cu NC(KookminU)
- 7.1.28 2 Carrier Transport by FE Thermal Detrapping in SiNC film (Tokyo Inst. of Tech)
7.2 Nanocrystal Embedded Flash Production
- 7.2.1 Embedded Flash Memory using a Silicon Nanocrystal Storage Medium (Freescale)

8.0 Embedded Phase Change Memory - Technology, Test and Reliability

8.1 Overview of Phase-Change RAM (PC-RAM) Technology
8.2 58 nm 1.8 V 6.34 MB/s 1-Gb PRAM Integrated With SRAM (Samsung)
8.3 4-Mb 1T1R GST ePCM in 90 nm CMOS (Numonyx (now Micron) )
8.4 Embedded PCRAM in 65 nm CMOS Technology (NXP-TSMC)
8.5 Fast sub-20 nm Dash Confined Cell PRAM (Samsung)
8.6 4-Mb 90 nm PCM Macro with 1.2V 12 ns Read and 1/MB/s Write(STM, Micron) )
8.7 Phase Change Memory Product (Numonyx (now Micron) )
8.8 Phase Change Memory Product (Samsung)
8.9 4-Mb 90 nm PCM Macro with 1.2V 12 ns Read and 1/MB/s Write (STM, Micron) )
8.10 1-Gb PCM in 45 nm CMOS Technology (Micron )
8.11 Stacking PCM in Cross-Point Array with Ovonic Threshold Switch (Intel, Micron)
8.12 Integrated PCM Process Module Embedded in 90 nm 6ML CMOS (STM, Micron)

9.0 Conductive Bridge Resistance RAMs

9.1 Conductive BridgeMemory / Programmable Metallization Cell (Adesto Technologies)

10.0 Embedded Resistance RAM Technology

10.1 Bipolar RRAM using HfSiON bilayer stack (NanyangTU,A*STAR,IMEC)
10.2 ZrO2 1T1R RRAM with Multilevel Storage Characteristics (NCTU and Winbond)
10.3 Unipolar Switching in Fab Compatible Hi/HfO2/TiN RRAM (IMEC, KU Leuven)
10.4 High Yield Ni/HfOx/n+ Si RRAM Cross-Bar+ Si Diode (Nanyang,NUS Soitec,Fudan)
10.5 Nickel Nanocrystals in TiO2 Film in RRAMs (IIT India)
10.6 180 nm CMOS TiO2-SiO2 eRRAM Cell (NCTU, Nat. Nano Dev. Lab., Fu Jen U)
10.7 4Mb HfO2 ReRAM Macro with 7.2ns/160 ns SLC/MLC (ITRI, NTHU, NCU)
10.8 Scaling Analysis of NiO RRAM (Politecnico di Milano)
10.9 90 nm CMOS Compatible1T1R TiN/TiON/Si Contact RRAM (NTHU, TSMC)
10.10 4F2 CMOS Cross-Bar HfO2 ReRAM with Vertical BJT Access(NTHU, ITRI)
10.11 Switching Mechanism for CMOS Compatible WOx ReRAM (Macronix)
10.12 Model for Switching Phenomena in Unipolar NiO-based RRAM (Stanford U.)
10.13 180 nm Fully Integrated 1-Kbit Array HfOx-based RRAM (NTHU)
10.14 ZrO2 Crossbar RRAM built on a foundry platform substrate (Chin. Acad. Of Sci)
10.15 Copper Doped SrZrO3 and SrTiO3 (IBM Zurich)
10.16 Multilevel and Low Voltage Ta2O5/TiO2 ReRAM (NEC)
10.17 Ta2O5/TiO2 ReRAM Stack (NEC)
10.18 1-Kb array of 1T1R HfOx RRAM in 180 nm CMOS(various Taiwan Universities)
10.19 90 nm TiN/TiON RRAM Cell in CMOS Logic Technology(Nat.Tsing-Hua U, TSMC)
10.20 System-on-Chip Using ReRAM & 1T-DRAM Unified RAM for Embedded Memory
10.21 NiO Resistance Change Memory with 3-D Integration (Stanford University)
10.22 1-Kbit HfO2 1T1R RRAM With Multi-Level Operation(ITRI, Nat.TsingHua U.)
10.23 Cross-Point Array with ZnO Diodes for 3-D Structures (Numonyx (now Micron) )

11.0 Embedded Fuse Memories

11.1 Embedded Fuse Memory in 32 nm CMOS Technology (TSMC)
11.2 1T1R Fuse Memory (Intel)

12.0 Embedded Field Program MRAM

12.1 Production 16-Mb 180 nm MRAM for SRAM Replacement (Everspin)
12.2 Shape-Varying MTJ with Inserted Write Line for Embedded MRAM (NEC)

13.0 Thermally Assisted Switching (TAS) MRAM Technology for Embedded Memory

13.1 TAS-MRAM using Pre-Charged Sense Amps for Embedded Memory (IEF, CNRS)
13.2 MRAM Using Thermal Programming Above the Blocking Temperature (Crocus)
13.3 FPGA Circuit Based on Thermally Assisted Switching MRAM (LIRMM)
13.4 Thermal Assisted Switching MRAM (TAS-MRAM) Element in FPGA (INESC-ID)

14.0 Embedded Spin Transfer Torque (STT) MRAM

14.1 STT- MRAM Overview
14.2 Yield Improvement of STT MRAM Considering Process Variations (Purdue Univ.)
14.3 Thermal Stability of STT MRAM Embedded in CMOS Logic(Grandis)
14.4 STT-MRAM for Embedded Memory (Grandis)
14.5 Write Margin of 90 nm STT MRAM Technology (IBM, MagIC)
14.6 High Temperature Operation of STT-MRAM (Qualcomm)
14.7 Negative Resistance Read and Write Schemes for STT-MRAM (Fujitsu, U.of Toronto)
14.8 Reference Schemes for a 64-Mb MRAM Using Perpendicular TMR (Toshiba)
14.9 Modeling and Analysis of an Embedded STT MRAM (Intel)
14.10 45 nm eSTT MRAM Solving Source Degeneration Issue(TSMC, Qualcomm)
14.11 STT-MRAM for NOR Flash Replacement in 65 nm Technology (Crocus)
14.12 MRAM Test Method for Write Disturbance Faults in BIST (Nat. Tsing Hua U.)
14.13 32-Mb STT-MRAM in 150 nm CMOS (Hitachi and Tohoku U.)
14.14 MTJ MRAM With Current Induced Switching in Reconfigurable Logic(TohokuU.)

15.0 Embedded MRAM Using Perpendicular Magnetic Anisotropy (PMA) Junctions

15.1 Device Properties of PMA Junctions Embedded in CMOS Technology (IBM, MagIC)
15.2 MTJ Technology using Perpendicular Anisotropy for Fast Arrays(Grandis)

16.0 Domain Wall Spin Polarized Three Terminal Embedded MRAM

16.1 Dual Pillar STT-MRAM with Tilted Magnetic Anisotropy (Purdue University)
16.2 16-Kbit Spin-CAM Using Domain Wall MRAM Technology (NEC, Tohoku Univ.)
16.3 Critical Current of Perpendicular Domain Wall Motion and Wire Dimension (NEC)
16.4 Domain Wall Motion and Thermal Stability of Co/Ni Strips (NEC)
16.5 Perpendicular Domain Wall Spin-Polarized MRAM (NEC)

17.0 Embedded Logic and MRAM

17.1 Magnetic Logic Unit Technology: NOR, NAND, XOR (Crocus)
17.2 MRAM and Magnetic Logic Unit Technology (IBM and Crocus)

18.0 Embedded FeRAM

18.1 Embedded FeRAM Applications
18.2 Processor with Embedded FeRAM for Industrial Data Collection (Ramtron)
18.3 Low Voltage 130 nm CMOS 1-Mb FeRAM with Time-to-Digital Sensing (MIT,TI)
18.4 A Ferroelectric Tunnel FET (Federal PolyTech of Lausanne)
18.5 Subthreshold Swing of Stack using P(VDF-TrFE)(Fed. PolyTech,U.Auto Barcelona)
18.6 Polarization Behavior of Poly (VFT) CoPolymer Ferroelectric Capacitors (Uof Texas )
18.7 64-Mb Chain FeRAM with 200 MB/s Burst Mode
18.8 FeNAND with NV Page Buffer in Enterprise SSD Applications (U. of Tokyo, NIAIST)

19.0 Companies Supplying or Developing Products with Embedded Non-Volatile Memory

19.1 Actel
19.2 Adesto Technologies
19.3 Atmel
19.4 Crocus
19.5 EM Microelectronics
19.6 Energy Micro
19.7 Freescale
- 19.7.1 Freescale Embedded Floating Gate Flash Technology
- 19.7.2 Freescale Embedded Floating Gate Flash MCU Product Announcements
- 19.7.3 Freescale Silicon Nanocrystal Embedded NV Memory Technology
- 19.7.4 Freescale Silicon NanoCrystal Embedded Flash MCU Announcements
19.8 Fujitsu
- 19.8.1 Fujitsu Embedded Ferroelectric RAM Product Announcements
- 19.8.2 Fujitsu Embedded Floating Gate Flash Product Announcements
19.9 Hitachi
- 19.9.1 Hitachi and Tohoku University
19.10 Infineon
- 19.10.1 Infineon 65 nm eFlash Technology
- 19.10.2 Infineon Embedded Floating Gate Flash MCU Introductions
19.11 Intel
- 19.11.1 Intel 1T1R Fuse
19.12 Macronix
- 19.12.1 ReRAM (Macronix)
19.13 MicroChip
- 19.13.1 Microchip Embedded Non-Volatile Memory Technology
- 19.13.2 Microchip Embedded Flash Product
19.14 Micron
- 19.14.1 Micron Cross-Point ZnO Diode Technology
- 19.14.2 Micron/Numonyx PCM Technology
19.15 NXP
- 19.15.1 NXP Embedded Floating Gate Flash Technology
- 19.15.2 NXP Flash MCU Announcements
19.16 Ramtron
- 19.16.1 Ramtron FeRAM Technology
- 19.16.2 Ramtron FeRAM Products
19.17 Renesas
- 19.17.1 Renesas Strategies and Roadmap
- 19.17.2 Renesas Flash ROM and EEPROM Product
- 19.17.3 Renesas Embedded MONOS Technology and Product
19.18 Samsung Semiconductor
- 19.18.1 Samsung Floating Gate Embedded Flash Technology
- 19.18.2 Samsung Embedded Flash in SoC Using SOONO Technology
- 19.18.3 Phase Change Memory Product (Samsung)
19.19 STMicroelectronics
- 19.19.1 STM eFlash Technology
- 19.19.2 STM Floating Gate Flash MCU Product
- 19.19.3 STM Embedded Flash Technology
- 19.19.4 STM Phase Change Memory Technology
19.20 Texas Instruments
- 19.20.1 TI Embedded Flash Technology
- 19.20.2 TI Ferroelectric RAM Process
19.21 Toshiba

20 Embedded Flash Memory Foundries

20.1 Austria Microsystems Foundry (Austria)
20.2 Global Foundries (formerly Chartered Semiconductor (Singapore))
20.3 Dongbu HiTek (Korea)
20.4 Grace Semiconductor Manufacturing Corporation(China)
20.5 Hua Hong NEC (China)
20.6 SMIC (China)
20.7 Tower Semiconductor (Israel)
20.8 TSMC (Taiwan)
- 20.8.1 TSMC Embedded Split-Gate Flash
- 20.8.2 TSMC 45 nm MRAM Technology Development
- 20.8.3 eMemory eNon-Volatile in TSMC 130 nm Process
20.9 UMC
- 20.9.1 UMC Embedded Flash
20.10 X-Fab

21.0. Companies Supplying/Developing Embedded Non-Volatile Memory IP and Services

21.1 Axon Technology
21.2 eMemory
21.3 Grandis (now Samsung)
21.4 Kilopass
21.5 MoSys
21.6 SST SuperFlash (now owned by Microchip Technology)
21.7 Virage Logic

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