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Non-Volatile Memories Embedded in Logic: Applications, Technology, Products and Vendors, Dec. 2011
(eFloating Gate Flash, eSONOS, eNanocrystal, eFuse, eFP-MRAM, eSTT-MRAM, eFeRAM, ePC-RAM, eCB-RAM, eReRAM)

The microcontroller market in 2011 appears to have recovered to more than 2007 levels after a lengthy downturn through 2009 and 2010 and continued growth is currently being forecast. Flash MCU technology ranges from 130 nm for 8-bit and 16-bit MCU to 90 nm for 32-bit MCU at various vendors. leading edge development is in the 65 nm technology range. The capacity of embedded flash ranges up to 4-MBytes. Most companies are still using embedded floating gate flash, although several of the emerging embedded memory technologies have made it into production in an applicable niche. Freescale is in production with its thin film nanocrystal memory, Fujitsu makes FeRAM based MCU, Numonyx and Samsung have produced IC's with phase change memory. Renesas is in production with a charge trapping MONOS memory and Everspin is shipping field-programmable MRAM.

Important applications areas include: automotive assist and safety, industrial and home networking, The top 10 automotive flash microcontroller suppliers in 2010 were: Renesas, Freescale, Infineon, TI, Fujitsu, STMicroelectronics, Microchip, Atmel, Samsung, and NXP. Important automotive areas in 2011 included: functional safety, advanced driver assistance systems, driver assistance for small cars and electric and hybrid car control . Energy efficient household appliances claimed much attention as did battery operated household tools. Networked systems included: home and industrial networks many with ZigBee RF interfaces replacing IR. FeRAMs from Ramtron have found their way into smart RFID tags. Chips for digital utility meters are being supplied by several vendors to include communications interfaces and tamper detection. The market for portable home medical equipment is growing due to the baby boom generation reaching retirement age. Freescale is sampling their MCU with embedded nanocrystal flash memory into this application.

Several companies have reported development work on floating gate flash. A 90 nm single polysilicon NVM was described which embeds in standard CMOS without mask or process adder. A scalable 65 nm embedded split gate flash was developed to embed in CMOS logic used multiple floating gate dielectrics side-by-side erase and floating gate.A new erase gate disturb mechanism was described for a split gate flash. A study related of oxide thickness variation for FG embedded flash to data retention and reliability. A study of hot carrier injection on 65 nm embedded floating gate flash devices was modeled. A 2T cell with shared floating gate was used as a configurable switch in an FPGA module.

A 20nm split gate charge trap memory was described using silicon nanocrystals or silicon nitride. A single polysilicon SONOS flash memory technology was described for embedding in SoC applications. A dynamic programming algorithm improved reliability. A MONOS flash memory was integrated with a processor core in a production MCU.

Development continues for embedded non-volatile memory in each of the emerging memory areas including: nanocrystal storage with a 90 nm split gate memory being discussed at a foundry, continued development on embedded phase change memory with several 1-Gb PCM being discussed., a 130 nm embedded conductive bridge RAM was studied for its write energy reduction to less than 5 pj. Embedded resistance RAM technology had many studies done including fab compatible unipolar switching and several high density stacked cross-point arrays . Work continues on the field programmable MRAM even as it moves into production in SRAM replacement markets and a thermal assisted MRAM moves into production. Significant effort continues on the STT MRAM including much recent effort on perpendicular anisotropy MRAM and three terminal domain wall devices. Low voltage FeRAMs continue in development for low power embedded applications.

200+ pages.

| Description | Contents | To Purchase |

Non-Volatile Memories Embedded in Logic: Applications, Technology, Products and Vendors, Dec. 2011
(eFloating Gate Flash, eSONOS, eNanocrystal, eFuse, eFP-MRAM, eSTT-MRAM eFeRAM, ePC-RAM, eCB-RAM, eReRAM)

Table of Contents

1.0 Overview of Embedded Non-Volatile Memories

2.0 Embedded Non-Volatile Memory Market Overview

3.0 Flash MCU Production Technology Overview

4.0 Applications for Flash Microcontrollers

5.0 Embedded Floating Gate Flash Technology Development

6.0 Embedded Charge Trapping Product, Technology and Development

7.0 Nanocrystal Storage for Embedded Floating Gate Flash Production and Technology

8.0 Embedded Phase Change Memory - Technology, Test and Reliability

9.0 Conductive Bridge Resistance RAMs

10.0 Embedded Resistance RAM Technology

11.0 Embedded Fuse Memories

12.0 Embedded Field Program MRAM

13.0 Thermally Assisted Switching (TAS) MRAM Technology for Embedded Memory

14.0 Embedded Spin Transfer Torque (STT) MRAM

15.0 Embedded MRAM Using Perpendicular Magnetic Anisotropy (PMA) Junctions

16.0 Domain Wall Spin Polarized Three Terminal Embedded MRAM

17.0 Embedded Logic and MRAM

18.0 Embedded FeRAM

19.0 Companies Supplying or Developing Products with Embedded Non-Volatile Memory

20 Embedded Flash Memory Foundries

21.0. Companies Supplying/Developing Embedded Non-Volatile Memory IP and Services

Bibliography

 

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Non-Volatile Memories Embedded in Logic: Applications, Technology, Products and Vendors, Dec. 2011
(eFloating Gate Flash, eSONOS, eNanocrystal, eFuse, eFP-MRAM, eSTT-MRAM, eFeRAM, ePC-RAM, eCB-RAM, eReRAM)

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